Abstract:Semiconductor superlattices have been extensively investigated for thermoelectric applications, to explore the effects of compositions, interface structures, and lattice strain environments on the reduction of thermal conductivity, and improvement of efficiency. Most studies assumed that their electronic properties remain unaffected compared to their bulk counterparts. However, recent studies demonstrated that electronic properties of silicon (Si)/germanium (Ge) superlattices show significant variations depending on compositions and growth substrates. These studies used a constant relaxation time approximation, and ignored the effects of electron scattering processes. Here, we consider electron scattering with phonons and ionized impurities, and report first-principles calculations of electronic transport properties including the scattering rates. We investigate two classes of Si/Ge superlattices: superlattices with varied compositions grown on identical substrates and with identical compositions but grown on different substrates. We illustrate the relationship between the energy bands of the superlattices and the electron-phonon relaxation times. We model the electron-ionized impurity interaction potentials by accounting for the in-plane and the cross-plane structural anisotropy. Our analysis reveals that the inclusion of electron-phonon and electron-impurity scattering processes can lead to ~1.56-fold improved peak power-factors, compared to that of bulk Si. We observe that superlattices can also display dramatically reduced power-factors for specific lattice strain environments. Such reduction could cancel out thermoelectric efficiency improvements due to reduced thermal conductivities. Our study provides insight to predict variation of electronic properties due to changes in lattice strain environments, essential for designing superlattices with optimized electronic properties.

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A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs/GaSb type-II superlattices

Role of Ionized Impurity and Interface Roughness Scatterings in the Electronic Transport of InAs/GaSb Type II Superlattices at Low Temperatures

Study of the Electron Mobility in InAs/GaSb Type II Superlattices at High Temperatures

Scattering mechanisms of highest-mobility InAs/Al$_{x}$Ga$_{1-x}$Sb quantum wells

On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers

Transport studies of InAs thin films grown on GaAs by MBE

Effect of High-Lying Minibands on Superlattice Vertical Transport

Subband Effect on Miniband Transport in Laterally Confined Superlattices

Miniband Transport In Semiconductor Superlattices In A Quantized Magnetic-Field

Superlattice vertical transport with high-lying minibands

High-field transport in semiconductor superlattices for interacting Wannier-Stark levels

First-Principles Study of Interface Relaxation Effect on Interface and Electronic Structures of Inas/Gasb Superlattices with Different Interface Types

Electron mobility and energy relaxation rate in GaAs/GaAlAs superlattice

Ballistic transport and boundary scattering in InSb/InxAl1-xSb mesoscopic devices

Effect of Electron-Phonon and Electron-Impurity Scattering on Electronic Transport Properties of Silicon/Germanium Superlattices

Temperature-Dependent Electron Mobility in Inas Nanowires

Analysis of the Scattering of Electrons by Special Vibrational Modes in A Gaas Quantum Well with A Thin Alas Middle Barrier: Mobility Modulated by A Transversal Electric Field

Growth and transport properties of InAs epilayers on GaAs

Low-temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped Pseudomorphic N-AlGaAs/GaInAs/GaAs Structures

Hot-electron Mobility in Laterally Confined Systems