Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs

S. Schmult,C. Gerl,U. Wurstbauer,C. Mitzkus,W. Wegscheider

DOI: https://doi.org/10.1063/1.1926409

2005-03-14

Abstract:Carbon-doped high mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 10^6 cm^2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport direction.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to realize a two - dimensional hole system with high mobility and long spin lifetime by growing carbon - doped high - mobility two - dimensional hole gas (2DHG) on GaAs(110) substrates. Specifically, the researchers focus on the following aspects:

1. **Improving hole mobility**: By optimizing the growth conditions, the researchers hope to obtain high - mobility two - dimensional hole gas on GaAs substrates in the non - polar (110) direction. Previous studies have mainly focused on substrates in the (001) direction, and the (110) direction may exhibit different physical properties due to its special crystal structure.

2. **Exploring mobility anisotropy**: In the case of high mobility, obvious mobility anisotropy is observed, that is, the hole mobilities in different directions are significantly different. This phenomenon is very important for understanding the microstructure and electron behavior of materials.

3. **Studying spin splitting caused by the Rashba effect**: In an asymmetric structure, the Rashba effect will cause spin splitting of the heavy - hole sub - band. The researchers found that this spin splitting is independent of the transport direction, which provides a basis for further research on spin transport characteristics.

4. **Solving the impurity diffusion problem**: Compared with beryllium used as an acceptor in the past, carbon doping can effectively solve the problems of impurity segregation and diffusion, thereby improving the quality and stability of the sample.

5. **Application in spintronics**: Due to the absence of part of the spin relaxation process on the (110) surface, the spin lifetime is longer, which is of great significance for the application of spintronics devices.

### Main achievements

- A hole mobility exceeding \(10^6 \, \text{cm}^2/\text{Vs}\) has been achieved on GaAs substrates in the (110) direction.
- The hole mobility along the \([- 110]\) direction is observed to be \(1.13\times 10^6 \, \text{cm}^2/\text{Vs}\), while along the \([001]\) direction it is \(4.8\times 10^5 \, \text{cm}^2/\text{Vs}\), showing obvious anisotropy.
- Spin splitting caused by structural inversion symmetry breaking has been observed at low temperatures, and this spin splitting is the same in different transport directions.
- An L - shaped Hall bar sample has been successfully prepared, and detailed electrical transport measurements have been carried out to verify the above results.

These research achievements lay a solid foundation for the future development of high - mobility two - dimensional hole systems based on GaAs substrates in the (110) direction and their applications in spintronics.