Abstract:A record‐high mobility of holes, reaching 4.3 × 106 cm2 V−1 s−1 at 300 mK in an epitaxial strained germanium (s‐Ge) semiconductor, grown on a standard silicon wafer, is reported. This major breakthrough is achieved due to the development of state‐of‐the‐art epitaxial growth technology culminating in superior monocrystalline quality of the s‐Ge material platform with a very low density of background impurities and other imperfections. As a consequence, the hole mobility in s‐Ge appears to be ≈2 times higher than the highest electron mobility in strained silicon. In addition to the record mobility, this material platform reveals a unique combination of properties, which are a very large and tuneable effective g*‐factor (>18), a very low percolation density (5 × 109 cm−2) and a small effective mass (0.054 m 0). This long‐sought combination of parameters in one material system is important for the research and development of low‐temperature electronics with reduced Joule heating and for quantum‐electronics circuits based on spin qubits. A record‐high mobility of holes in germanium semiconductor grown on a standard silicon wafer is reported, which exceeds the previous state‐of‐the‐art value by over 4 times. Moreover, this material platform reveals a unique combination of properties, essential for quantum‐electronics applications, which are very large and tuneable effective g*‐factor, the lowest percolation density, and small effective mass.

Ultra-high hole mobility exceeding one million in a strained germanium quantum well

Holes Outperform Electrons in Group IV Semiconductor Materials

Ultraclean two-dimensional hole systems with mobilities exceeding 10$^7$ cm$^2$/Vs

Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology

Ultraclean two-dimensional hole systems with mobilities exceeding

Non-localized states and high hole mobility in amorphous germanium

Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition

Ultra High Hole Mobility in Ge Films Grown Directly on Si (1 0 0) Through Interface Modulation

Undoped Strained Ge Quantum Well with Ultrahigh Mobility of Two Million

Hole Mobility in the Ultra-Thin-body Junctionless Germanium-on-insulator P-Channel Metal-Oxide-semiconductor Field-Effect Transistors

Ultra high hole mobility in Ge films grown directly on Si (100) through interface modulation

Molecular Beam Epitaxy of High Mobility Silicon, Silicon Germanium and Germanium Quantum Well Heterostructures

(Invited) Low-Temperature Growth of Strained Germanium Quantum Wells for High Mobility Applications

High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits

Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35 x10^6 cm^2/Vs in AlGaAs/GaAs quantum wells grown by MBE

Quantum Transport Quality of a Processed Undoped Ge/SiGe Heterostructure

Hole Mobility Enhancement Mechanism of Wurtzite GaN/AlN Heterojunction Quantum Well Under Tensile and Compressive Stresses

On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers

Extremely High Intrinsic Carrier Mobility and Quantum Hall Effect of Single Crystalline Graphene Grown on Ge(110)

Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces