Abstract:We report a versatile chemical vapor deposition (CVD) method to dope Ge films with Ga atoms in situ over a wide concentration range spanning from 3 × 1018 to 2.7 × 1020 cm-3. The method introduces a stable and volatile Ga hydride [D2GaN(CH3)2]2 that reacts readily with Ge4H10 to deliver Ga dopants controllably and systematically at complementary metal-oxide-semiconductor compatible ultralow temperatures of ∼360 °C. Thick and monocrystalline layers (1.3 μm) are produced on Si substrates at growth rates approaching 50 nm/min. The doped crystals are fully epitaxial and devoid of misfit defects and Ga precipitates as evidenced by Rutherford backscattering spectrometry, X-ray diffraction, and cross-sectional transmission electron microscopy. The Ga contents measured by secondary ion mass spectrometry and the active carrier concentrations determined by spectroscopic ellipsometry (as well as Hall effect measurements in several cases) are in close agreement, indicating near full activation. Photoluminescence spectra show a strong emission peak at 0.79 eV corresponding to the direct gap E0 transition, evidence of the indirect transition, and additional structures characteristic of p-type Ge. Electroluminescence and I- V curves measured from p(Ga)-i-n photodiodes are found to be at par with those from boron-based reference devices. These results are promising and demonstrate that a single-source CVD approach allows independent control of Ga doping level and junction depth, producing flat dopant profiles, high activation ratios, uniform distributions, and sharp interfaces. This method potentially represents a viable alternative to state-of-the-art boron-based p-type doping and activation of Ge-like materials.

Heavily Carbon-Doped Gaas Grown by Movpe Using Carbon Tetrabromide for Hbts

LPMOVPE grown GaAs:C films

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs

The Structural and Optical Properties of Be-doped GaAs Grown by MBE

Algan/Gan/Ingan/Gan Dh-Hemts with Gan Channel Layer Grown at High Temperature

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

MOCVD Ge-on-GaAs and Its P-Type Doping Via Incorporating Ga Atoms

Fabrication of 45 Nm High in Component Metamorphic In(0.7)Ga0.3as/In0.6ga(0.4)As Composite-Channel High Electron-Mobility Transistors on Gaas Substrates

Characterization of growth of carbon doped GaAs with microscope

A Study of Electrical Characteristics for Boron Implantation of Mbe Grown Hgcdte

High-quality metamorphic HEMT grown on GaAs substrates by MBE

UHV/CVD n--type silicon epitaxy used for SiGe HBT device

AlGaN/GaN/InGaN/GaN DH‐HEMTs Structure with an AlN Interlayer Grown by MOCVD

The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs

SiGe/Si Material Grown by GSMBE

Fabrication of 100-Nm Metamorphic AlInAs/GaInAs HEMTs Grown on Si Substrates by MOCVD

Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries

Low Surface Recombination Velocity and Contact Resistance Using P+/P Carbon-Doped Gaas Structures

A Comparative Study of Metamorphic Inp/Ingaas Heterojunction Bipolar Transistors (mhbts) Grown by Gas and Solid Source Molecular Beam Epitaxy (Mbe)

Carrier depth profile of Si/SiGe/Si n-p-n HBT structural materials characterized by electrochemical capacitance-voltage method