Abstract:AlGaN/GaN high electron mobility transistors (HEMTs) are grown on 2-inch Si (111) substrates by MOCVD. The stacked AlGaN/AlN interlayer with different AlGaN thickness and indium surfactant doped is designed and optimized to relieve the tensile stress during GaN epitaxial growth. The top 1.0 mu m GaN buffer layer grown on the optimized AlGaN/AlN interlayer shows a crack-free and shining surface. The XRD results show that GaN( 002) FWHM is 480 arcsec and GaN(102) FWHM is 900 arcsec. The AGaN/GaN HEMTs with optimized and non-optimized AlGaN/AlN interlayer are grown and processed for comparison and the dc and rf characteristics are characterized. For the dc characteristics of the device with optimized AlGaN/AlN interlayer, maximum drain current density I-dss of 737mA/mm, peak transconductance G(m) of 185 mS/mm, drain leakage current density I-ds of 1.7 mu A/mm, gate leakage current density I-gs of 24.8 mu A/mm and off-state breakdown voltage V-BR of 67V are achieved with L-g/W-g/L-gs/L-gd = 1/10/1/1 mu m. For the small signal rf characteristics of the device with optimized AlGaN/AlN interlayer, current gain cutoff frequency f(T) of 8.3 GHz and power gain cutoff frequency f(max) of 19.9 GHz are achieved with L-g/W-g/L-gs/L-gd = 1/100/1/1 mu m. Furthermore, the best rf performance with f(T) of 14.5 GHz and f(max) of 37.3 GHz is achieved with a reduced gate length of 0.7 mu m.

High-quality metamorphic HEMT grown on GaAs substrates by MBE

MBE-grown AlGaN/GaN HEMTs with 186 mS/mm Transcond uctance

Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy

The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices

Electrical properties of metamorphic In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.65</sub>Ga<sub>0.35</sub>As HEMT's on GaAs substrate

Fabrication of AlGaN/GaN High-Electron-mobility Transistors

Electrical properties of metamorphic in0.52Al 0.48As/In0.65Ga0.35As HEMT's on GaAs substrate

GaAs Nanomembranes in the High Electron Mobility Transistor Technology

Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure

AlGaN/GaN High Electron Mobility Transistors with a Low Sub-Threshold Swing on Free-Standing GaN Wafer

High Performance 50nm T-Gate In0.52A10.48As/In0.53Ga0.47As Metamorphic High Electron Mobility Transistors

High-performance InAlGaN/GaN Enhancement-Mode MOS-HEMTs Grown by Pulsed Metal Organic Chemical Vapor Deposition

High performance 50nm T-gate In(0.52)A1(0.48)As/In0.53Ga0.47As metamorphic high electron mobility transistors

Growth and characteristics of InP/InXGa1-XAs/In0.53Ga0.47As HEMTs

Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication

Static Characteristics of AlGaN/GaN High Electron Mobility Transistors with Different Thickness of AlGaN Layer

Growth and Characteristics of InP/In/sub X/ga/sub 1-X/as/in/sub 0.53/ga/sub 0.47/as HEMTs

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications

Growth and characteristics of InP/InxGa1-xAs/In 0.53Ga0.47As HEMTs

Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure