Abstract:We present the detailed dc and radio-frequency characteristics of an $\hbox{Al}_{0.3}\hbox{Ga}_{0.7}\hbox{N/GaN/In}_{0.1}\hbox{Ga}_{0.9}\hbox{N/GaN}$ double-heterojunction HEMT (DH-HEMT) structure. This structure incorporates a thin (3 nm) $\hbox{In}_{0.1}\hbox{Ga}_{0.9}\hbox{N}$ notch layer inserted at a location that is 6-nm away from the AlGaN/GaN heterointerface. The $\hbox{In}_{0.1}\hbox{Ga}_{0.9}\hbox{N}$ layer provides a unique piezoelectric polarization field which results in a higher potential barrier at the backside of the two-dimensional electron gas channel, effectively improving the carrier confinement and then reducing the buffer leakage. Both depletion-mode (D-mode) and enhancement-mode (E-mode) devices were fabricated on this new structure. Compared with the baseline AlGaN/GaN HEMTs, the DH-HEMT shows lower drain leakage current. The gate leakage current is also found to be reduced, owing to an improved surface morphology in InGaN-incorporated epitaxial structures. DC and small- and large-signal microwave characteristics, together with the linearity performances, have been investigated. The channel transit delay time analysis also revealed that there was a minor channel in the InGaN layer in which the electrons exhibited a mobility slightly lower than the GaN channel. The E-mode DH-HEMTs were also fabricated using our recently developed $\hbox{CF}_{4}$-based plasma treatment technique. The large-signal operation of the E-mode GaN-based HEMTs was reported for the first time. At 2 GHz, a $\hbox{1} \times \hbox{100}\ \mu\hbox{m}$ E-mode device demonstrated a maximum output power of 3.12 W/mm and a power-added efficiency of 49% with single-polarity biases (a gate bias of $+$0.5 V and a drain bias of 35 V). An output third-order interception point of 34.7 dBm was obtained in the E-mode HEMTs.

Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure

The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices

Photoluminescence of Algaas/Ingaas/Gaas Pseudomorphic Hemts with Different Thickness of Spacer Layer

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Design of AlInAs/InP Tunnel Junction and Its Application in Devices

Optical Investigations On Pseudomorphic: Delta-Doped Algaas/Ingaas/Gaas Quantum Wells

High-quality metamorphic HEMT grown on GaAs substrates by MBE

Growth and characteristics of InP/InXGa1-XAs/In0.53Ga0.47As HEMTs

100-nm T-gate InAlAs/InGaAs InP-based HEMTs with f T = 249 GHz and f max = 415 GHz

Growth and characteristics of InP/InxGa1-xAs/In 0.53Ga0.47As HEMTs

Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure

High-performance InAlGaN/GaN Enhancement-Mode MOS-HEMTs Grown by Pulsed Metal Organic Chemical Vapor Deposition

Mm-Wave Performance of 50nm T-Gate AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistors with Ft of 200 GHz

High Performance 50nm T-Gate In0.52A10.48As/In0.53Ga0.47As Metamorphic High Electron Mobility Transistors

DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs

Fabrication of AlGaN/GaN High-Electron-mobility Transistors

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

MBE-grown AlGaN/GaN HEMTs with 186 mS/mm Transcond uctance

Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures

Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy

Growth and Characteristics of InP/In/sub X/ga/sub 1-X/as/in/sub 0.53/ga/sub 0.47/as HEMTs