Abstract:An 80-nm gate length metamorphic high electron mobility transistor (mHEMT) on a GaAs substrate with high indium composite compound-channels In0.7Ga0.3As/In0.6Ga0.4 As and an optimized grade buffer scheme is presented. High 2-DEG Hall mobility values of 10200 cm(2)/(V.s) and a sheet density of 3.5 x 10(12) cm(2) at 300 K have been achieved. The device's T-shaped gate was made by utilizing a simple three layers electron beam resist, instead of employing a passivation layer for the T-share gate, which is beneficial to decreasing parasitic capacitance and parasitic resistance of the gate and simplifying the device manufacturing process. The ohmic contact resistance R-c is 0.2 Omega.mm when using the same metal system with the gate (Pt/Ti/Pt/Au), which reduces the manufacturing cycle of the device. The mHEMT device demonstrates excellent DC and RF characteristics. The peak extrinsic transconductance of 1.1 S/mm and the maximum drain current density of 0.86 A/mm are obtained. The unity current gain cut-off frequency (f(T)) and the maximum oscillation frequency (f(max)) are 246 and 301 GHz, respectively.

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