Abstract:This study presents an investigation of high-voltage enhancement-mode p-GaN gate HEMTs on a sapphire substrate. The breakdown voltage of the devices shows a linear relationship with the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$L_{\text{GD}}$</tex> . For <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$L_{\text{GD}}=27 \mu\mathrm{m}$</tex> , the device exhibits a high breakdown voltage of 1412 V. The threshold voltage is 0.9 V. The <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{on}}$</tex> is <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$17.7\ \ \Omega\cdot \text{mm}$</tex> , and the specific on-resistance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{sp}}$</tex> is <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$6.73\ \mathrm{m}\Omega\cdot \text{cm}^{2}$</tex> . To measure the depletion region directly for high-voltage devices, depletion-testing structures were fabricated alongside the HEMTs. The depletion lengths were determined based on the I- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V$</tex> characteristics of the structures, with the pinch-off voltage of the I- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V$</tex> characteristics correlated to the depletion length. Additionally, using pulse waveforms as the gate control signals, the formation of the depletion region under dynamic conditions was revealed.

Effects of Depletion Region in GaN-based Metal-Semiconductor-metal Planar Inter-Digitated Varactor

A GaN-based metal-semiconductor-metal planar inter-digitated varactor

Method to Study Dynamic Depletion Behaviors in High-Voltage (<tex>$BV=1.4\ \text{kV}$</tex>) p-GaN Gate HEMT on Sapphire Substrate

Experimental Measurement of Depletion Region Distribution in Gan Hemts with Channel-Probe Branch

Dielectric Thin Films for GaN-based High-Electron-mobility Transistors

Effect of Device Geometry on Static and Dynamic Performance of AlGaN/GaN-on-Si High Electron Mobility Transistor

Monolithic Integration of Enhancement- and Depletion-Mode AlGaN/GaN HEMTs for GaN Digital Integrated Circuits

Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs

Influence of Transverse Geometry of Sidewall Gates on Characteristics of AlGaN/GaN Fin-HEMTs

Impacts of eliminating ungated access regions on DC and thermal performances of GaN-based MIS-HEMT

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

Planar Wrap-Around Gated Algan/Gan Mis-Hemts

Monolithic Integration of Enhancement/depletion-Mode High Electron Mobility Transistors Using Hydrogen Plasma Treatment

Dynamic Extension Behavior of the Depletion Region in GaN HEMTs Monitored with A Channel-Probe Branch Structure.

The DC Performance and RF Characteristics of GaN-Based HEMTs Improvement Using Graded AlGaN Back Barrier and Fe/C Co-Doped Buffer

Study on the Gate-Terminated Field-Plates for GaN-Based HEMT

Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier

Method to Study Dynamic Depletion Behaviors in High-Voltage ($BV=1.4\ \text{kv}$) P-Gan Gate HEMT on Sapphire Substrate

Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs

Simulation Study of P-Gan Gate HEMTs with Dielectric Interlayer

Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐free AlGaN/GaN Heterostructures