Abstract:Gallium nitride (GaN)-based high electron mobility transistor (HEMT) power devices have demonstrated great potential applications due to high current density, high switching speed, and low ON-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMT a promising candidate for next-generation power converters. Many of the early GaN HEMTs are devices with Schottky gate, which suffer a high gate leakage and a small gate swing. By inserting an insulator under gate metal, the MIS-HEMT is highly preferred over the Schottky-gate HEMT for high-voltage power switche, owing to the suppressed gate leakage and enlarged gate swing. However, the insertion of the gate dielectric creates an additional dielectric/(Al) GaN interface that presents some great challenges to AlGaN/GaN MIS-HEMT, such as the threshold voltage (Vth) hysteresis, current collapse and the reliability of the devices. It has been reported that the poor-quality native oxide (GaOx) is detrimental to the dielectric/(Al) GaN interface quality that accounted for the Vth instability issue in the GaN based device. Meanwhile, it has been proved that in-situ plasma pretreatment is capable of removing the surface native oxide. On the other hand, low power chemical vapor deposition (LPCVD)-Si3N4 with free of plasma-induced damage, high film quality, and high thermal stability, shows great potential applications and advantages as a choice for the GaN MIS-HEMTs gate dielectric and the passivation layer. In this work, an in-situ pre-deposition plasma nitridation process is adopted to remove the native oxide and reduce surface dangling bonds prior to LPCVD-Si3N4 deposition. The LPCVD-Si3N4/GaN/AlGaN/GaN MIS-HEMT with a high-quality LPCVD-Si3N4/GaN interface is demonstrated. The fabricated MIS-HEMT exhibits a very-low Vth hysteresis of 186 mV at VG-sweep=(-30 V, +24 V), a high breakdown voltage of 881 V, with the substrate grounded. The hysteresis of our device at a higher positive end of gate sweep voltage (VG +20 V) is the best to our knowledge. Switched off after an off-state VDS stress of 400 V, the device has a dynamic on-resistance Ron only 36% larger than the static Ron.

Simulation Study of P-Gan Gate HEMTs with Dielectric Interlayer

Simulation Design of a High-Breakdown-voltage P-Gan-gate GaN HEMT with a Hybrid AlGaN Buffer Layer for Power Electronics Applications

Simulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer

Study on a p-GaN HEMT with composite passivation and composite barrier layers

Dielectric Thin Films for GaN-based High-Electron-mobility Transistors

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

An Improved Design for E-Mode AlGaN/GaN HEMT with Gate Stack -Ga2o3/p-gan Structure

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances

Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs using Metal/Graphene Gates

The Modulation Effects of Charged Dielectric Thin Films on Two-Dimensional Electron Gas in Algan/Gan Heterostructure

Numerical Simulation of AlXGa1-XN/AlN/GaN HEMT

Threshold Voltage Modulation and Gate Leakage Suppression of Enhancement-Mode GaN HEMT by Metal/Insulator/p-GaN Gate Structure

High-performance normally off p-GaN gate high-electron-mobility transistor with In 0.17 Al 0.83 N barrier layer design

An improved design for e-mode AlGaN/GaN HEMT with gate stack β-Ga2O3/p-GaN structure

Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Study of GaN/AlGaN Air Structure Gate HEMTs with High Linearity for RF Applications

High-performance AlGaN/GaN MIS-HEMT Device Based on in Situ Plasma Nitriding and Low Power Chemical Vapor Deposition Si3N4 Gate Dielectrics

Interface and Electrical Properties of Buried InGaAs Channel MOSFET with an InP Barrier Layer and Al2O3/HfO2/Al2O3 Gate Dielectrics