Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region

Lianjie Li,Bao Zhu,Xiaohan Wu,Shijin Ding

DOI: https://doi.org/10.3390/mi15070815

IF: 3.4

2024-06-24

Micromachines

Abstract:To enhance the electrical safe operation area (eSOA) of laterally diffused metal oxide semiconductor (LDMOS) transistors, a novel reduced surface electric field (Resurf) structure in the n-drift region is proposed, which was fabricated by ion implantation at the surface of the LDMOS drift region and by drift region dimension optimization. Technology computer-aided design (TCAD) simulations show that the optimal value of Resurf ion implantation dose 1 × 1012 cm−2 can reduce the surface electric field in the n-drift region effectively, thereby improving the ON-state breakdown voltage of the device (BVon). In addition, the extended n-drift region length of the Ld design also improves device BVon significantly, and is aimed at reducing the current density and the electric field, and eventually suppressing the n-drift region impact ionization. The results show that the novel 60 V nLDMOS has a competitive BVon performance of 106.9 V, which is about 20% higher than that of the conventional one. Meanwhile, the OFF-state breakdown voltage of the device (BVoff) of 88.4 V and the specific ON-resistance (RON,sp) of 129.7 mΩ⋅mm2 exhibit only a slight sacrifice.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied

What problem does this paper attempt to address?

The paper primarily focuses on improving the electrical Safe Operating Area (eSOA) of 60V nLDMOS (Lateral Diffused Metal-Oxide-Semiconductor) transistors. By introducing a novel Reduced Surface Field (Resurf) structure in the n-drift region and optimizing the drift region dimensions, the authors aim to enhance the device's breakdown voltage in the on-state (BV_on).

Specifically, the study employs the following methods to achieve its goals:
1. **Resurf Ion Implantation**: Resurf ion implantation is performed on the surface of the n-drift region to reduce the surface electric field, effectively suppressing the widening of the depletion layer in the drift region caused by the Kirk effect. The optimal Resurf ion implantation dose is determined to be 1×10^12 cm^-2, which can significantly lower the surface electric field of the n-drift region, thereby improving BV_on.
2. **Drift Region Length Optimization**: Extending the length of the n-drift region (L_d) helps to further enhance BV_on. By optimizing L_d, the current density and electric field intensity can be reduced, thereby suppressing impact ionization within the n-drift region.
3. **Comprehensive Optimization**: By comprehensively considering the effects of Resurf ion implantation dose, energy, and the length of the n-drift region, a competitive 60V nLDMOS device is ultimately designed. This device achieves a BV_on of 106.9V, which is approximately 20% higher than traditional devices, while the off-state breakdown voltage (BV_off) and specific on-resistance (R_ON,sp) are only slightly compromised.

In summary, the main objective of this paper is to improve the electrical Safe Operating Area of 60V nLDMOS through engineering techniques, particularly enhancing its voltage tolerance in the on-state. Through the aforementioned strategies, the researchers successfully improved the key performance indicators of the device.