Abstract:A novel Si/SiC heterojunction Lateral Double-diffused Metal Oxide Semiconductor with the Semi-Insulating Polycrystalline Silicon field plate (SIPOS Si/SiC LDMOS) is proposed in this paper for the first time. The innovative terminal technology of Breakdown Point Transfer (BPT) had been applied on Si/SiC MOSFETs. This creative technology improved Breakdown Voltage (BV) of the proposed device, compared with the conventional Si LDMOS (Cov. LDMOS). In order to optimize the trade-off between BV and Specific On-Resistance ( $text{R}_{mathrm{ ON,SP}}$ ), the SIPOS field plate is applied on Si/SiC LDMOS for the first time in this paper. At On-State, due to the internal electric field of SIPOS filed plate, the majority carriers accumulation layer is formed on the surface of the drift region for the proposed SIPOS Si/SiC LDMOS, which means $text{R}_{ON,SP}$ will be reduced. Meanwhile, the electric field modulation effect of SIPOS field plate can make the surface electric field distribute evenly, which leads to an increase of BV. In addition, due to the high-thermal conductivity of SiC substrate, the heat-dissipation efficiency of the proposed device is significantly improved. The simulation results show that the BV of SIPOS Si/SiC LDMOS is 428.4V, which increased by 78.4% in comparison with Cov. LDMOS (BV of 240.0V) with the same structure parameters. The $text{R}_{mathrm{ ON,SP}}$ of SIPOS Si/SiC LDMOS is decreased from $33.2{mathrm{ m}}Omega cdot {mathrm{ cm}}^{2}$ of Cov. LDMOS to $24.0{mathrm{ m}}Omega cdot {mathrm{ cm}}^{2}$ , decreased by 27.7%. Fu-thermore, the figure-of-merit (FOM = BV<sup>2</sup>/ $text{R}_{mathrm{ on,sp}}$ ) of SIPOS Si/SiC LDMOS reaches 7.6MW/cm<sup>2</sup>, which means SIPOS Si/SiC LDMOS has enough performance to break the Silicon limit.

A New 600V Partial SOI LDMOS with Step-Doped Drift Region

A 600V-Class Partial SOI LDMOS with Step-Doped Drift Region

Numerical Investigation of Transient Breakdown Voltage Enhancement in SOI LDMOS by Using a Step P-Type Doping Buried Layer

A Novel SiC LDMOS with Electric Field Optimization by Step Doping Technology

Design and optimization of a novel SOI LDMOS structure using PIN junction

Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region

Novel Si/SiC Heterojunction Lateral Double-Diffused Metal Oxide Semiconductor With SIPOS Field Plate by Simulation Study

Realization of 850 v breakdown voltage LDMOS on Simbond SOI

A novel double-gate trench SOI LDMOS with double-dielectric material by TCAD Simulation Study

Field Plate-Adaptive Doping: A Novel Surface Electric Field Optimization Technique for SOI LDMOS With Gate Field Plate

Numerical Modeling of Linear Doping Profiles for High-Voltage Thin-Film Soi Devices

Linearly Graded Doping Drift Region: a Novel Lateral Voltage-Sustaining Layer Used for Improvement of RESURF LDMOS Transistor Performances

A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile

Optimization of Impact Ionization in Metal–Oxide–Semiconductor Field-Effect Transistors for Improvement of Breakdown Voltage and Specific On-Resistance

A High-k LDMOS Improved by Floating Field Plates for Enhanced Cost Performance and Robustness

SOI LDMOS With High-k Multi-Fingers to Modulate the Electric Field Distributions

Ultra-Low On-Resistance SiC LDMOS With Separated-Protected Trench Gates and Trench RESURF Technology

Super Junction Lateral Double-Diffused MOSFET with Ultra-low Specific on-Resistance Completely Eliminating Substrate Assisted Depletion Effect

Advanced N-Channel LDMOS with Ultralow Specific On-Resistance by 0.18 Μm Epitaxial BCD Technology

Analysis and Optimization of SDOI Structure to Maximize the Intrinsic Performance of Extremely Scaled MOSFETs

Linearly-Graded Drift Region-Doped (LGDRD) RESURF LDMOS with an Improved Trade-off Between the Breakdown Voltage and On-Resistance