Abstract:This article proposes a novel ultralow specific ON-resistance (${R}_{ \mathrm{\scriptscriptstyle {ON},sp}}$ ) triple reduced surface field (RESURF) lateral double-diffused MOSFET (LDMOS) with sandwich n-p-n layer. Compared with the conventional triple RESURF LDMOS with n-type top layer (NTTR LDMOS), the new structure is characterized by an additional N-buried layer below the P-buried layer. Due to the introduction of N-buried layer, the concentration of N-top layer will decrease to ensure charge balance, thus making the surface electric field distribution better and the higher additional doping introduced by N-top and N-buried layers can be achieved. The dose and implantation energy of n-p-n layers were simulated and optimized. Furthermore, in order to eliminate the premature avalanche breakdown occurring in the source-centered termination region, substrate termination technology (STT) is applied to avoid the high electric field peaks generated in the curved source region with small curvature radius. But the use of STT makes it easy to breakdown in the transitional region compared with the straight region. Therefore, the transitional region is studied and the crucial parameter $\Delta {L}$ in the layout of transitional region is also optimized. The fabricated device experimentally demonstrated improved performance with low ${R}_{ \mathrm{\scriptscriptstyle {ON},sp}}$ of 78.3 $\text{m}\Omega \cdot $ cm2 and high breakdown voltage (BV) of 795 V, and the experimental ${R}_{ \mathrm{\scriptscriptstyle {ON},sp}}$ is 26.8% lower than that of the conventional triple RESURF LDMOS (CTR LDMOS) and 10% lower than that of the NTTR LDMOS based on ${L}_{d} = 67 \mu \text{m}$ , which can break the silicon limit of CTR and NTTR LDMOS and meet the demand of 700-V high-voltage integrated circuit applications.

Linearly-Graded Drift Region-Doped (LGDRD) RESURF LDMOS with an Improved Trade-off Between the Breakdown Voltage and On-Resistance

Linearly Graded Doping Drift Region: a Novel Lateral Voltage-Sustaining Layer Used for Improvement of RESURF LDMOS Transistor Performances

A Novel RESURF LDMOS with Embedded CB-layer

Linearly Varying Surface-Implanted N− Layer Used for Improving Trade-off Between Breakdown Voltage and On-Resistance of RESURF LDMOS Transistor

Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region

A Novel SiC LDMOS with Electric Field Optimization by Step Doping Technology

Off-state Avalanche-Breakdown-induced On-Resistance Degradation in SGO–NLDMOS

Ultra-Low On-Resistance SiC LDMOS With Separated-Protected Trench Gates and Trench RESURF Technology

A 600V-Class Partial SOI LDMOS with Step-Doped Drift Region

A Novel Ultralow R ON,sp Triple RESURF LDMOS With Sandwich n-p-n Layer

Analytical Model For The Ideal Breakdown Voltage And Optimum Doping Profile Of Soi Resurf Ldmos

A Novel RF LDMOS Fabricated with Standard Foundry Technology

A New 600V Partial SOI LDMOS with Step-Doped Drift Region

Numerical Modeling of Linear Doping Profiles for High-Voltage Thin-Film Soi Devices

Analytical Model of Surface Field Distribution and Breakdown Voltage for RESURF LDMOS Transistor

Numerical Investigation of Transient Breakdown Voltage Enhancement in SOI LDMOS by Using a Step P-Type Doping Buried Layer

A novel double-gate trench SOI LDMOS with double-dielectric material by TCAD Simulation Study

Field Plate-Adaptive Doping: A Novel Surface Electric Field Optimization Technique for SOI LDMOS With Gate Field Plate

A High-k LDMOS Improved by Floating Field Plates for Enhanced Cost Performance and Robustness

An Analytical Model for the 3D-RESURF Effect

Double Dielectrics Enhancement on the LDMOS using High-k Field Dielectric and Low-k Buried Dielectric