Abstract:This article proposes a novel ultralow specific ON-resistance (${R}_{ \mathrm{\scriptscriptstyle {ON},sp}}$ ) triple reduced surface field (RESURF) lateral double-diffused MOSFET (LDMOS) with sandwich n-p-n layer. Compared with the conventional triple RESURF LDMOS with n-type top layer (NTTR LDMOS), the new structure is characterized by an additional N-buried layer below the P-buried layer. Due to the introduction of N-buried layer, the concentration of N-top layer will decrease to ensure charge balance, thus making the surface electric field distribution better and the higher additional doping introduced by N-top and N-buried layers can be achieved. The dose and implantation energy of n-p-n layers were simulated and optimized. Furthermore, in order to eliminate the premature avalanche breakdown occurring in the source-centered termination region, substrate termination technology (STT) is applied to avoid the high electric field peaks generated in the curved source region with small curvature radius. But the use of STT makes it easy to breakdown in the transitional region compared with the straight region. Therefore, the transitional region is studied and the crucial parameter $\Delta {L}$ in the layout of transitional region is also optimized. The fabricated device experimentally demonstrated improved performance with low ${R}_{ \mathrm{\scriptscriptstyle {ON},sp}}$ of 78.3 $\text{m}\Omega \cdot $ cm2 and high breakdown voltage (BV) of 795 V, and the experimental ${R}_{ \mathrm{\scriptscriptstyle {ON},sp}}$ is 26.8% lower than that of the conventional triple RESURF LDMOS (CTR LDMOS) and 10% lower than that of the NTTR LDMOS based on ${L}_{d} = 67 \mu \text{m}$ , which can break the silicon limit of CTR and NTTR LDMOS and meet the demand of 700-V high-voltage integrated circuit applications.

A Novel RESURF LDMOS with Embedded CB-layer

A novel triple RESURF LDMOS with partial N+ buried layer

Linearly Graded Doping Drift Region: a Novel Lateral Voltage-Sustaining Layer Used for Improvement of RESURF LDMOS Transistor Performances

A Novel Double Resurf Ldmos with Multiple Rings in Non-Uniform Drift Region

A Novel Ultralow RON,sp Triple RESURF LDMOS with Sandwich N-P-n Layer

A Novel Ultralow R ON,sp Triple RESURF LDMOS With Sandwich n-p-n Layer

Design of a Novel Triple Reduced Surface Field LDMOS with Partial Linear Variable Doping N-Type Top Layer

A Novel SiC LDMOS with Electric Field Optimization by Step Doping Technology

Ultralow Specific On-Resistance High Voltage Trench Soi Ldmos with Enhanced Resurf Effect

Linearly Varying Surface-Implanted N− Layer Used for Improving Trade-off Between Breakdown Voltage and On-Resistance of RESURF LDMOS Transistor

High Voltage REBULF LDMOS with N+ Buried Layer

Ultra-Low On-Resistance SiC LDMOS With Separated-Protected Trench Gates and Trench RESURF Technology

A New Reduced Bulk Field (REBULF) High-Voltage LDMOS with N+-Floating Layer

Suppression Of Hot-Hole Injection In High-Voltage Triple Resurf Ldmos With Sandwich N-P-N Layer: Toward High-Performance And High-Reliability

A Novel Double RESURF LDMOS with Optimized ESD Robustness

A Novel D-RESURF SOI LDMOS with Embedded Gate

A High-Voltage P-Ldmos with Enhanced Current Capability Comparable to Double RESURF N-Ldmos

An Ultralow Specific On-Resistance 200V LDMOS for Voltage Extension of a 0.18µm BCD Process

Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region

Realization of A Novel 1200V VLD Double RESURF LDMOS with n-Bury Layer

New High Voltage SJ-LDMOS with Non-uniform N-buried Layer