Abstract:In this article, the degradation mechanisms of radiation-hardened vertical double-diffused MOSFETs (VD-MOSFET) experiencing gamma ray irradiation and annealing sequentially experiment device and simultaneously experiment device (Si-ED) are studied and compared. Experiments demonstrate that the Si-ED irradiated with gate bias (+12 V) has a lower oxide-trapped charges increment ( $Delta {N}_{ ext {ot}})$ and higher interface states increment ( $Delta {N}_{ ext {it}})$ , compared to those of sequential experiment device (Se-ED). However, for Si-ED irradiated with drain bias (200 V), it shows lower $Delta {N}_{ ext {ot}}$ and $Delta {N}_{ ext {it}}$ than those of Se-EDs, which is similar to that observed in the case of devices irradiated with three-terminal bias (200-V drain bias, −10-V gate bias, and source grounded). In addition, for all cases, it is seen that the drain-biased devices own a larger $Delta {N}_{ ext {ot}}$ but a smaller $Delta {N}_{ ext {it}}$ , compared to those of gate-biased ones, and the three-terminal-biased devices show the lowest, especially in Si-ED. As a result, the variations of $Delta {N}_{ ext {ot}}$ and $Delta {N}_{ ext {it}}$ could cause different degradations of threshold voltage, breakdown voltage, leakage current, and ON-state resistance of devices, which would inevitably threaten the proper functioning of electrical systems. Moreover, in this article, it is concluded that the existing standard, i.e., accelerated annealing after irradiation, cannot reflect the actual radiation reliability of devices. Other evaluation methods regarding total ionizing dose (TID) need to be further explored comprehensively.

Analysis and Mitigation of Single-Event Gate Rupture in VDMOS with Termination Structure

Analysis and Hardening of SEGR in Trench VDMOS with Termination Structure

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

A Novel Structure for Improving the SEGR of a VDMOS

Updated Structure of Vertical Double-Diffused MOSFETs for Irradiation Hardening Against Single Events

Study of heavy ion induced single event gate rupture effect in SiC MOSFETs

Single Event Effects of Low-Voltage N-type and P-type Trench-gate MOSFET Devices

Single-Event Effect Hardened VDMOS Device with Hole Bypass Structure

Total Ionizing Dose Effects in 30-V Split-Gate Trench VDMOS

Single-event Burnout Effect on Radiation-hardened High-voltage NMOS

Effects of Non-Fatal Electrostatic Discharge on the Threshold Voltage Degradation in Nano CMOS Devices

Impact of Heavy-Ion Irradiation in an 80-V Radiation-Hardened Split-Gate Trench Power UMOSFET

Heavy-ion induced gate damage and thermal destruction in double-trench SiC MOSFETs

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

Simulation Study of Single-Event Effects for the 4H-SiC VDMOSFET With Ultralow On-Resistance

Degradation of VDMOS Under Simultaneous and Sequential Stress of Gamma Ray Irradiation and Annealing Process

Trade-Off Between TID and SEGR Effects Based on High-Voltage Radiation-Hardened Gate Oxide

Total Ionizing Dose Effects of 60co Γ-Ray Radiation on Split-Gate SiC MOSFETs

The Progress of SEB and SEGR Irradiation Hardening Technology for Power MOSFET

Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs

Simulation Study on Single-Event Burnout Reliability of 4H-Sic Trench Gate MOSFET with Combined P-buried Layer