Abstract:Aluminum (Al) ion implantation is one of the most important technologies in SiC device manufacturing processes due to its ability to produce the p-type doping effect, which is essential to building p–n junctions and blocking high voltages. However, besides the doping effect, defects are also probably induced by the implantation. Here, the impacts of Al ion implantation-induced defects on 4H-SiC MOSFET channel transport behaviors are studied using a multiscale simulation flow, including the molecular dynamics (MD) simulation, density functional theory (DFT) calculation, and tight-binding (TB) model-based quantum transport simulation. The simulation results show that an Al ion can not only replace a Si lattice site to realize the p-doping effect, but it can also replace the C lattice site to induce mid-gap trap levels or become an interstitial to induce the n-doping effect. Moreover, the implantation tends to bring additional point defects to the 4H-SiC body region near the Al ions, which will lead to more complicated coupling effects between them, such as degrading the p-type doping effect by trapping free hole carriers and inducing new trap states at the 4H-SiC bandgap. The quantum transport simulations indicate that these coupling effects will impede local electron transports, compensating for the doping effect and increasing the leakage current of the 4H-SiC MOSFET. In this study, the complicated coupling effects between the implanted Al ions and the implantation-induced point defects are revealed, which provides new references for experiments to increase the accepter activation rate and restrain the defect effect in SiC devices.

The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

ESR studies of ion implanted phosphorus donors near the Si-SiO2 interface

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All 'Room Temperature' Ion Implantations

Effect of Er Ion Implantation on the Physical and Electrical Properties of TiN/HfO 2 Gate Stacks on Si Substrate

The Effect of the Boron-Ions Implantation on the Performance of RADFETs

A Multiscale Simulation on Aluminum Ion Implantation-Induced Defects in 4H-SiC MOSFETs

Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon

Critical issues in the formation of quantum computer test structures by ion implantation

Incomplete Ionization-Dependent Carrier Mobility in Silicon-on-Insulator n-p-n Double-Gate Tunnel Field-Effect Transistors

Charge Buildup and Spatial Distribution of Interface Traps in 65 nm pMOSFETs Irradiated to Ultra-high Doses

Metastable Electron Traps in Modified Silicon-on-Insulator Wafer

Al-implantation induced damage in 4H-SiC

A Temperature Independent Effect of Near-Interface Traps in 4H-Sic MOS Capacitors

Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling

Effects of the LPCVD Gate Dielectric Deposition Temperature on GaN MOSFET Channels and the Root Causes at the SiO2-GaN-Interface

Insights into the effects of Al-ion implantation temperature on material properties of 4H-SiC

Ion implantation into Si covered by HfO2 or SiO2 film