Abstract:As the device size continues to shrink, the gate oxygen layer in MOS devices continues to become thinner, which leads to problems such as increased leakage current in conventional Si MOS devices. SiC, an important semiconductor material used in high-power devices, is not immune to the problem of premature breakdown due to the gate oxygen layer. Based on this, this paper adopts the innovative approach of replacing the conventional SiO 2 as the gate oxygen layer with the high-k material, hafnium dioxide (HfO 2 ), and continues the in-depth study on the electrical characteristics of the gate oxygen structure. In this paper, hafnium dioxide (HfO 2 ) thin films were deposited on SiC and Si substrates using the atomic layer deposition(ALD) method. The metal-insulated semiconductor (MIS) structures with Al as the upper and lower electrodes were prepared, and the leakage currents and breakdown voltage characteristics of the MOS capacitors on the two different substrates were investigated. The leakage current density of the MOS capacitor structure with SiC substrate is 10 -11 A/cm 2 ,and the breakdown voltage is about 32 V. Based on the capacitance-voltage (C-V) measurements, the frequency dependence of the movable charge at the interface of the MOS capacitor structure is investigated. The lowest interfacial defect density (D it ) of the MOS capacitive structure with SiC substrate is only of the order of 10 10 eV -1 cm -2 , while the movable charge N eff of the oxide layer of this sample is also controlled to the order of 10 13 cm -2 . It is worth mentioning that the HfO 2 /SiC structure performs better than the HfO 2 /Si structure in these electrical parameters, and the sample designed in this paper also performs better in electrical parameters than previous studies. These results undoubtedly demonstrate that the combination of High-k material (HfO 2 ) and SiC in the MOS gate oxygen layer is a promising research topic.

Electron trapping in HfO 2 layer deposited over a HF last treated silicon substrate

Characterization of Electron Traps in Si-Capped Ge MOSFETs with $\hbox{hfo}_{2}/\hbox{sio}_{2}$ Gate Stack

Properties and dynamic behavior of electron traps in HfO2/SiO2 stacks

An Assessment of the Location of As-Grown Electron Traps In$hboxhfo_2$/hfsio Stacks

Determination of Capture Cross Sections for As-Grown Electron Traps in HfO2∕HfSiO Stacks

Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method

The identification of traps in HfO 2 -based FeFET with SiON as an interlayer using current transient method

Radiation-induced Charge Trapping in Si-MOS Capacitors with HfO2/SiO2 Gate Dielectrics

Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Interfacial Structure and Electrical Properties of Ultrathin HfO2dielectric Films on Si Substrates by Surface Sol–gel Method

Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO$_2$/4H-SiC MOSFETs

Probing the oxygen vacancy associated native defects in high-κ HfO2 using deep level transient spectroscopy

Effects of Biased Irradiation on Charge Trapping in HfO 2 Dielectric Thin Films

Electrical Characterization of HfO2/4H-SiC and HfO2/Si MOS Structures

Experimental investigation of dipole formation and modulation at Hf 0.5 Zr 0.5 O 2 /SiO 2 interface

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Distinguishing Interfacial Hole Traps in (110), (100) High-K Gate Stack.

Characterization of Interface and Bulk Traps in Ultrathin Atomic Layer-Deposited Oxide Semiconductor MOS Capacitors With HfO2/In2O3 Gate Stack by C-V and Conductance Method

Molecular Dynamics Simulation of Ion Implantation into HfO 2 and HfO 2 /si Multi-Layer Structure

Dynamic Observation of Oxygen Vacancies in Hafnia Layer by in Situ Transmission Electron Microscopy

Ion implantation into Si covered by HfO2 or SiO2 film