Abstract:Electron trapping in HfO 2 -based MOS structures was studied through pulsed capacitance-voltage (C-V) technique. 10 nm HfO 2 layer was deposited by atomic layer deposition over a HF last treated Si substrate. The C-V curves were observed to shift to positive voltages driven by the positive applied voltage along the pulses, consistent with electron trapping due to tunneling transitions between the substrate and pre-existing defects within the oxide and the subsequent lattice relaxation through electron-phonon interaction. The dependences of the voltage shift for a given capacitance value ( ΔV C ) with stress bias and time, allowed to distinguish two mechanisms. An initial trapping process occurs for times shorter than the microsecond, probably associated with a thin non-stoichiometric SiO x interfacial layer, which is followed by a trapping process that starts after tens of μs and progressively slowed down, associated with traps within the HfO 2 layer. Numerical simulations yield for the HfO 2 traps an energy of 1.3 eV below the conduction band edge, decreasing exponentially with the distance from the Si interface with a characteristic length of 1.7 nm; and phonon and relaxation energies of 50 meV and 1 eV, respectively. These physical parameters are consistent with previous reports of electron trapping in HfO 2 layers deposited on a controlled interfacial layer, suggesting that trapping properties of defects inside the HfO 2 layer are insensitive to the treatment of the Si surface before HfO 2 deposition. On the other hand, the observed large initial trapping suggests that the non-controlled SiO x interfacial region is more defective than a controlled one.

Distinguishing Interfacial Hole Traps in (110), (100) High-K Gate Stack.

Characterizing the Charge Trapping Across Crystalline and Amorphous Si/SiO 2 /hfo 2 Stacks from First-Principle Calculations

Oxygen vacancies in high-k oxides

The identification of traps in HfO 2 -based FeFET with SiON as an interlayer using current transient method

Modeling of direct tunneling current through interfacial oxide and high-K gate stacks

Probing the oxygen vacancy associated native defects in high-κ HfO2 using deep level transient spectroscopy

Characterization of Interface Traps in SiO$_2$/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy

Theoretical investigation on hydrogen-related oxide traps in HfO2 gate dielectrics: An ab-initio study

Electron trapping in HfO 2 layer deposited over a HF last treated silicon substrate

Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO$_2$/4H-SiC MOSFETs

Role of Hole Trapping in the Unintentionally Doped GaN Layer in Suppressing the Two-Dimensional Electron Gas Degradation in AlGaN/GaN Heterostructures on Si

Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks.

New Framework for the random charging/discharging of oxide traps in HfO2 gate dielectric: ab-initio simulation and experimental evidence

Investigation of Extra Traps Measured by Charge Pumping Technique in High Voltage Zone in P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Hfo2/Metal Gate Stacks

First-principles study of oxygen vacancy defects in orthorhombic Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si gate stack

Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/ β -Ga2O3 metal-oxide-semiconductor capacitors

Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks.

Reliability investigation of high-k/metal gate in nMOSFETs by three-dimensional kinetic Monte-Carlo simulation with multiple trap interactions

First-principles study of oxygen vacancy defects in orthorhombic Hf0.5Zr0.5O2/SiO2/Si gate stack

Comprehensive Investigation of Multi-traps Induced Degradation in HfO2 Based nMOSFETs with Interfacial Layer by 3D-KMC Method

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.