Abstract:Electrically active defects in carbon-doped GaN layers were studied with a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) MIS structure. The GaN:C layers were grown with three different carbon doping concentrations (NC). A semi-vertical metal/semi-insulator/n-type semiconductor (MIS) device was fabricated to perform deep-level transient spectroscopy (DLTS) measurements. Two electron traps E1 and E2 with energy level at EC − (0.22–0.31) eV and EC − (0.45–0.49) eV were observed. E1 and E2 are associated with a nitrogen vacancy VN-related defect in the strain field of extended defects and a nitrogen antisite defect, respectively. By changing the reverse bias voltage of the DLTS measurement, the location and relative defect concentration of the E1 and E2 traps could be verified. A dominant electron trap E3 with an unusual capture cross section was only observed in devices with an NC = 2 × 1019 cm−3 GaN:C layer. This may charge carriers from a defect band and lead to the charge redistribution in the GaN:C layer when forward biased. A hole trap H1 with energy level at EV + 0.47 eV was found for the pulse bias in the forward ON-state. H1 is suggested to correspond with the CN induced 0/+ donor level. By analyzing the schematic band diagrams across the MIS structure, the carrier transport and defect charging mechanisms underlying the DLTS transient measurements are illustrated. The identification of the trap states in the carbon-doped GaN with different NC gives further understanding on the carbon doping impact on electric characteristics of GaN power devices made on Si substrates.

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Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized P‐gan Gate AlGaN/GaN HEMTs

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Analysis of Semi-Insulating Carbon-Doped GaN Layers Using Deep-Level Transient Spectroscopy

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High-field-induced Electron Detrapping in an AlGaN/GaN High Electron Mobility Transistor

Vertical Leakage Induced Current Degradation And Relevant Traps With Large Lattice Relaxation In Algan/Gan Heterostructures On Si

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Two-dimensional Electron and Hole Gases in InxGa1−xN/AlyGa1−yN/GaN Heterostructure for Enhancement Mode Operation

An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs

Negative Transconductance Effect in P-Gan Gate AlGaN/GaN HEMTs by Traps in Unintentionally Doped GaN Buffer Layer*

Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs

Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures

The Modulation Effect of LPCVD-Si X N Y Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure

Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Investigation on the sources of 2DEG in AlxGa1-xN/GaN HEMT