Study on sputtering of gas cluster ion beams

Minbo Tian,Yamada Isao

1997-01-01

Abstract:The sputtering effects on metals and SiO2 surface irradiated with CO2, Ar cluster ion beams were studied. The sputtering yield per cluster ion is higher than that for monomer ion by a factor of more than 100. The higher sputtering yield would result from the multiple collision, lateral sputtering and high density energy deposition of gas cluster ion beam.

What problem does this paper attempt to address?

Smoothing and cleaning effects on substrate surface by gas cluster ion beam

Minbo Tian,Yamada Isao

1997-01-01

Abstract:The change of surface roughness after gas cluster ion bombardment was measured by atomic force microscope. High removal rate of surface impurity was realized by this bombardment with low damage effect. The unique smoothing and cleaning effects on substrate surface by gas cluster ion beam would be resulted from multiple collision, lateral sputtering and high density energy deposition.
Irradiation effects of CO2 cluster ion beam an surface of Si substrate

Minbo Tian,Yamada Isao

1997-01-01

Abstract:Damage effects of CO2 cluster ion beam on Si substrate were studied by RBS and ellipsometry. It is found by experiments that for impact with big size cluster, the damage degree is slighter and the damage layer is shallower. The bigger the cluster size, the easier to form the lower damage oxide layer. With increase of dose, a thicker oxide layer from damage region is formed, at the same time a thinner and more abrupt transition appears between oxidized layer and the underlying crystalline Si.
Analysis of SiO2 layer formed on Si surface by CO2 cluster ion beam irradiation

Minbo Tian,Xiaodong Feng,Yamada Isao

1997-01-01

Abstract:The titled experiments were carried out, its result show that the thickness of oxide on Si surface induced by CO2 cluster ion beam irradiation depends on the CO2 cluster size and the beam energy. The thickening of oxide layer follows the reaction rule at lower irradiation dose, and the diffusion rule at higher dose.
Study of ion sputtering on AlxSn100-x alloy system

Zhenxia Wang,Jiping Zhang,Jisheng Pan,Zhenlan Tao,Fuying Zhu,Huiming Zhang,Yuewu Zeng

1994-01-01

Abstract:Angular distributions and preferential sputtering for Sn and Al atoms ejected from the AlxSn100-x (x=90, 70, 50, 30, 10) alloy system bombarded perpendicularly by a 30KeV Ar+ ion beam has been studied with the collector technique and the RBS analysis. The beam current intensity was less than 14 ��A/cm2, the beam total dose 1.4��1018Ar/cm2 and the diameter of spot on the target was 3mm. The experimental results show that there are change of surface topography and local enrichment of elements on the samples after bombardment. All samples bombarded were examined carefully using a SEM/ S-570, A model considering the influence of surface topography and localized element enrichment on the atomic ejection was proposed, and the calculation results are quite satisfactory.
Materials processing by gas cluster ion beams

Isao Yamada,Jiro Matsuo,Noriaki Toyoda,Allen Kirkpatrick,I Yamada

DOI: https://doi.org/10.1016/s0927-796x(01)00034-1

2001-10-30

Materials Science and Engineering: R: Reports

Abstract:This paper discusses the principles and experimental status of gas cluster ion beam (GCIB) processing as a promising surface modification technique for practical industrial applications. Theoretical and experimental characteristics of GCIB processes and of related equipment development are described from the moment of neutral cluster formation, through ionization, acceleration and impact upon a surface. The impact of an accelerated cluster ion upon a target surface imparts very high energy densities into the impact area and produces non-linear effects that are not observed in the impacts of atomic ions. Unique characteristics of GCIB bombardment have been found to offer potential for various industrial applications that cannot be achieved by conventional ion beam processing. Among prospective applications are included shallow ion implantation, high rate sputtering, surface cleaning and smoothing, and low temperature thin film formation. Sputtering effects produced by cluster ion impact are particularly interesting. High sputtering yields and lateral distribution of sputtered atoms cause surface smoothing effects which cannot be achieved with monomer ion beams. Surface smoothing to atomic levels is expected to become the first production use of GCIB.

English Else
Large-scale Molecular Dynamics Simulation for Two Ar Clusters Impact on 4H–sic

S. Satake,N. Inoue,T. Kunugi,M. Shibahara,H. Kasahara

DOI: https://doi.org/10.1016/j.nimb.2007.01.055

IF: 1.279

2007-01-01

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

Abstract:Large-scale molecular dynamics simulations with two Ar688 cluster impacts on a 4H–SiC surface are performed to investigate two clusters collisions for lateral sputtering mechanism. The target atoms are described by Tersoff potential with some modifications for 4H–SiC. Two Ar clusters are assumed by Ar688, which are described by simple Lennard-Jones potential. The initial velocity of both clusters is 2.55×104m/s when the acceleration voltage is 100keV. The computational volume is 30nm×30nm×16nm, which is constructed by 1444608 4H–SiC atoms. After 0.8ps of the impact on the 4H–SiC surface from a first Ar cluster, a second argon cluster collides at a position that is one “diameter” away from the center of the first impact and where term the “diameter” refers to the diameter of the footprint of the first impact on 4H–SiC. Consequently, the crater formed by the first cluster is smeared out by the lateral sputtering effect of the second cluster.
Differential characteristics of the particles sputtered by gas cluster ions at elevated temperatures. Molecular dynamics simulation

A.E. Ieshkin,A.V. Nazarov,D.R. Bessmertny,I.N. Kutlusurin,A.A. Shemukhin,D.R. Bessmertniy

DOI: https://doi.org/10.1016/j.vacuum.2024.113064

IF: 4

2024-02-26

Vacuum

Abstract:The effect of the target temperature on sputtering by gas cluster ions was investigated using molecular dynamics simulation. The temperature of copper target was set in range from 300 K to 1100 K, and bombarding 10 keV argon clusters had the size from 50 to 500 atoms. Sputter yield was found to increase with the temperature. The increase depended on the cluster size, and its value was much higher than it had been considered previously for nonlinear sputtering. Differential characteristics of the process, such as angular, energy, and time distributions of the sputtered atoms, as well as their initial positions, were obtained to promote understanding of the mechanisms involved. The dynamics of the collision crater size and its shape were described. The concept of temperature inside the collision area was used to explain the results.

materials science, multidisciplinary,physics, applied
Deposition of Size-Selected Metal Clusters Generated by Magnetron Sputtering and Gas Condensation: a Progress Review

C Xirouchaki,RE Palmer

DOI: https://doi.org/10.1098/rsta.2003.1306

2003-01-01

Abstract:This paper presents a topical review of the production and deposition of size-selected metal clusters generated by magnetron sputtering and gas condensation. Clusters with up to 75 000 atoms can be obtained by controlling the gas pressure in the sputtering source, prior to size selection with a novel (time-of-flight) mass filter. The clusters are deposited on the model graphite substrate to study the cluster-surface interaction. Two regimes for cluster deposition have been identified at elevated impact energies: (i) spinning' (ca. 10 eV per atom) and (ii) implantation (ca. 100 eV per atom). Of particular importance is the pinning regime, since this allows the fabrication of monodispersed cluster arrays, which are stable against diffusion at room temperature (and above). The deposition of size-selected metal clusters represents a novel method of preparing surface nanostructures, with potential applications including model catalyst studies and the immobilization of biological molecules.
Clustering Effects Of Sputtered Ions From Solid-Surfaces

Wang Guang-hou

DOI: https://doi.org/10.1016/0168-583X(88)90617-9

1988-01-01

Abstract:Some recent important developments for the formation of small atomic clusters ejected from ion bombarded solid surfaces are examined both experimentally and theoretically. Emphasis is put on the abnormal properties of sputtered ion clusters, such as odd-even alternation, isotopic effect and magic numbers together with their stability, configuration and ionization.
Silicon Carbide Wafer Polishing With Gas Cluster Ion Beams

V. DiFilippo,J. A. Bennett,D. B. Fenner,J. K. Hirvonen,L. C. Feldman,A. Saigal

DOI: https://doi.org/10.1115/imece2001/epp-24714

2001-11-11

Abstract:Abstract A novel technology utilizing energetic ionized gas cluster ion beams (GCIB) has been successfully used to reduce the surface roughness of SiC for electronic applications. In GCIB, a high-pressure gas, such as argon, is supersonically expanded through a nozzle into vacuum. This adiabatic expansion results in the condensation of clusters consisting of tens to thousands of gas atoms weakly held together by Van der Waals forces. These clusters are then ionized and accelerated towards the target substrate. Upon impact, they create a strong lateral sputtering effect resulting in a net smoothing of the surface. The surfaces of commercial, single-crystal, research grade SiC wafers were exposed to a series of Ar and O2 gas cluster ion treatments of varying doses and energies. After processing, atomic force microscope measurements indicated a reduction of surface roughness and removal of pre-existing CMP polishing scratches. Enhanced GCIB smoothing was achieved by using sequential doses of gas clusters with different energies, and in some cases different gases. Higher cluster energies removed scratches but added a high spatial-frequency roughness component, which could be in turn reduced by lower energy clusters. It was found that oxygen clusters produced a greater degree of smoothing than argon clusters. RBS ion channeling measurements were also conducted, and showed that processing with lower energy clusters as the final step of a series of doses minimized the creation of defects near the surface.
Cluster Growth in Cluster Beam Deposition Process by Direct Simulation Monte Carlo

hiroshi mizuseki,ying jin,jingzhi yu,yoshiyuki kawazoe

DOI: https://doi.org/10.3379/jmsjmag.23.s1_103

1999-01-01

Journal of the Magnetics Society of Japan

Abstract:A cluster growth model based on Direct Simulation Monte Carlo (DSMC) is introduced to examine the effect of experimental conditions in cluster beam deposition process. We simulate the behavior of cluster and inert gas in the flight path in the equipment for cluster beam deposition under different experimental conditions, which are flight path length, ratio of the material gas to the inert gas, and temperature of the outer wall of the equipment. Several size distributions of the cluster under various conditions are obtained by this model. The results of the present simulation show that the size distribution strongly depends on the experimental conditions. In other words, the size distribution of cluster can be controlled by changing the experimental conditions.
Towards a better understanding of the surface smoothing effect in gas cluster ion beam processing with molecular dynamics simulation and experiment

Peng Ji,Wa Tang,Haixiang Hu,Rongkuan Leng,Guanbo Qiao,Xuejun Zhang

DOI: https://doi.org/10.1364/oe.533111

IF: 3.8

2024-08-22

Optics Express

Abstract:Peng Ji, Wa Tang, Haixiang Hu, Rongkuan Leng, Guanbo Qiao, Xuejun Zhang In recent years, the application of gas cluster ion beam (GCIB) technology has made great progress. Due to the similar essence of a ... [Opt. Express 32, 31965-31983 (2024)]

optics
Molecular Dynamics Study on the Role of Ar Ions in the Sputter Deposition of Al Thin Films

Tobias Gergs,Thomas Mussenbrock,Jan Trieschmann

DOI: https://doi.org/10.1063/5.0098040

2022-04-04

Abstract:Molecular dynamics simulations are often used to study sputtering and thin film growth. Compressive stresses in these thin films are generally assumed to be caused by a combination of forward sputtered (peened) built-in particles and entrapped working gas atoms. While the former are assumed to hold a predominant role, the effect of the latter on the interaction dynamics as well as thin film properties are scarcely clarified (concurrent or causative). The inherent overlay of the ion bombardment induced processes render an isolation of their contribution impracticable. In this work, this issue is addressed by comparing the results of two case studies on the sputter deposition of Al thin films in Ar working gas. In the first run Ar atoms are fully retained. In the second run they are artificially neglected, as implanted Ar atoms are assumed to outgas anyhow and not alter the ongoing dynamics significantly. Both case studies have in common that the consecutive impingement of 100 particles (i.e., Ar$^+$ ions, Al atoms) onto Al(001) surfaces for ion energies in the range of 3 eV to 300 eV as well as Al/Ar$^+$ flux ratios from 0 to 1 are considered. The surface interactions are simulated by means of hybrid reactive molecular dynamics/force-biased Monte Carlo simulations and characterized in terms of mass density, Ar concentration, biaxial stress, shear stress, ring statistical connectivity profile, Ar gas porosity, Al vacancy density, and root-mean-squared roughness. Ultimately, implanted Ar atoms are found to form subnanometer sized eventually outgassing clusters for ion energies exceeding 100 eV. They fundamentally govern a variety of surface processes (e.g., forward sputtering/peening) and surface properties (e.g., compressive stresses) in the considered operating regime.

Materials Science
Accurate argon cluster-ion sputter yields: Measured yields and effect of the sputter threshold in practical depth-profiling by x-ray photoelectron spectroscopy and secondary ion mass spectrometry

Peter J. Cumpson,Jose F. Portoles,Anders J. Barlow,Naoko Sano

DOI: https://doi.org/10.1063/1.4823815

IF: 2.877

2013-09-28

Journal of Applied Physics

Abstract:Argon Gas Cluster-Ion Beam sources are likely to become widely used on x-ray photoelectron spectroscopy and secondary ion mass spectrometry instruments in the next few years. At typical energies used for sputter depth profiling the average argon atom in the cluster has a kinetic energy comparable with the sputter threshold, meaning that for the first time in practical surface analysis a quantitative model of sputter yields near threshold is needed. We develop a simple equation based on a very simple model. Though greatly simplified it is likely to have realistic limiting behaviour and can be made useful for estimating sputter yields by fitting its three parameters to experimental data. We measure argon cluster-ion sputter yield using a quartz crystal microbalance close to the sputter threshold, for silicon dioxide, poly(methyl methacrylate), and polystyrene and (along with data for gold from the existing literature) perform least-squares fits of our new sputter yield equation to this data. The equation performs well, with smaller residuals than for earlier empirical models, but more importantly it is very easy to use in the design and quantification of sputter depth-profiling experiments.

physics, applied
Note: Production of Silver Nanoclusters Using a Matrix-Assembly Cluster Source with a Solid CO2 Matrix.

V. T. A. Oiko,T. Mathieu,L. Cao,J. Liu,R. E. Palmer

DOI: https://doi.org/10.1063/1.4966213

IF: 4.304

2016-01-01

The Journal of Chemical Physics

Abstract:One of the main limitations to the application of clusters on applied areas is the limited production; therefore, it is of great interest to up scale cluster production while keeping good size control. The Matrix-Assembly Cluster Source is a new high flux cluster source, which exploits cluster formation inside a solid rare gas matrix that is sputtered by an ion beam. Clusters are formed and ejected in this process. Here we report the production of Ag clusters when the rare gas is replaced by CO2 for the matrix formation at 20 K. Size distributions were determined from scanning transmission electron microscopy analysis of samples with four different metal loadings, 4%, 8%, 14%, and 23% of Ag atoms to CO2 molecules, and two ion beam energies, 1 keV and 2 keV. Cluster mean size showed weak dependence on metal loading, being ≈80 atoms for the first three concentrations, whereas the change in ion beam energy has caused cluster mean size to shift from 86 to 160 atoms. The results are interpreted in terms of bonding energy between Ag and CO2 and compared to the rare gas (Ar) matrix.
Ion beam sputtering of silicon: Energy distributions of sputtered and scattered ions

Dmitry Kalanov,André Anders,Carsten Bundesmann

DOI: https://doi.org/10.1116/1.5114973

2019-09-01

Abstract:The properties of sputtered and scattered ions are studied for ion beam sputtering of Si by bombardment with noble gas ions. The energy distributions in dependence on ion beam parameters (ion energy: 0.5–1 keV; ion species: Ne, Ar, Xe) and geometrical parameters (ion incidence angle, polar emission angle, and scattering angle) are measured by means of energy-selective mass spectrometry. The presence of anisotropic effects due to direct sputtering and scattering is discussed and correlated with process parameters. The experimental results are compared to calculations based on a simple elastic binary collision model and to simulations using the Monte-Carlo code sdtrimsp. The influence of the contribution of implanted primary ions on energy distributions of sputtered and scattered particles is studied in simulations. It is found that a 10% variation of the target composition leads to detectable but small differences in the energy distributions of scattered ions. Comparison with previously reported data for other ion/target configurations confirms the presence of similar trends and anisotropic effects: the number of high-energy sputtered ions increases with increasing energy of incident ions and decreasing scattering angle. The effect of the ion/target mass ratio is additionally investigated. Small differences are observed with the change of the primary ion species: the closer the mass ratio to unity, the higher the average energy of sputtered ions. The presence of peaks, assigned to different mechanisms of direct scattering, strongly depends on the ion/target mass ratio.

physics, applied,materials science, coatings & films
SPUTTERING RESEARCH OF Al-50wt％Sn ALLOY

WANG ZHEN-XIA,ZHANG JI-PING,PAN JI-SHENG,TAO ZHEN-LAN,ZHANG HUI-MING,ZHAO LIE,ZENG YUE-WU,WANG CHENG-BAO,LIN ZHEN-CHANG

DOI: https://doi.org/10.7498/aps.41.1554

1992-01-01

Abstract:The angular distributions of sputtered Al and Sn atoms ejected from the Al-Sn multi phase alloy bombarded by 30keV Ar+ ion have been measured with collector technique and RBS analysis. The sputtered surface has been observed with scanning electron microscopy (SEM), and its compositions have been analyzed both in sputtered and unsputtered areas with electron x-ray probe microanalyser (EPMA). The results show that the angular distribution of sputtered Al atoms is nearly cosine, and that of Sn is over-cosine. To explain the experimental results we propose a reasonablt sputtering yield equation, Y(θ) = ∑Yi(θ) each , Yi(θ) stands for the sputtering yield of the area in which its surface topography and compositions is different from other areas.
An Optical Imaging Method for Studying the Spatial Distribution of Argon Clusters

D. Liu,J. F. Han,L. X. Bai,Z. Y. Chen

DOI: https://doi.org/10.1088/1748-0221/11/02/t02004

2016-01-01

Journal of Instrumentation

Abstract:An optical imaging method based on Rayleigh scattering is introduced to study the spatial distribution of atomic argon clusters produced in a gas jet. The radial distribution and evolution of the clusters are captured directly by a high speed camera, resulting in greatly increased precision and accuracy. It is found that the radial distribution of the clusters follows a Gaussian curve rather than the double-humped curve observed in a previous experiment. The normalized radial and axial distributions of the clusters are not influenced by the stagnation pressure and may be strictly determined by the nozzle structure. The average cluster sizes decrease slightly at far axial distances. A method of estimating the half-angle of the nozzle is also presented.
An Investigation on the Removal Characteristics of Compound Materials During Ion Beam Sputtering Using the Kinetic Monte Carlo Method

Xiao Liang,Xiang Wang,Erlong Miao,Jinjin Zheng,Fei Wang,Gaowen Wang,Yongqiang Gu

DOI: https://doi.org/10.1016/j.nimb.2014.01.010

IF: 1.279

2014-01-01

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

Abstract:Ion beam sputtering has been extensively adopted for optical surface processing. Due to differences between atoms in terms of atomic mass, surface binding energy and surface coverage fraction, the removal characteristics of the solid compound materials will be diverse. This paper first developed a quasi-atomistic model of the binary compound target and simulated ion beam sputtering processes using the Kinetic Monte Carlo (KMC) method. Furthermore, the effect of atomic differences on the removal characteristics was investigated. Finally, contrastive analysis between simulations and experiments of fused silica using an Ar+ ion beam was performed. The simulation results indicated that the competition between two types of preferential sputtering could cause the surface composition, removal amount and removal rate to oscillate in the early stage and to be relatively stable after a period of time. Compared with the fused silica experiments, the stable removal rate error of the KMC model considering the preferential sputtering is 5.9%; however, the stable removal rate error of the KMC model without regard to the preferential sputtering is 12.6%.
Studies of Ion Energy and Yield from Argon Clusters Heated by Intense Femtosecond Laser Pulses

S. H. Li,C. Wang,J. S. Liu,X. X. Wang,R. X. Li,G. Q. Ni,Z. Z. Xu

DOI: https://doi.org/10.1140/epjd/e2005-00145-2

2005-01-01

Abstract:Using time-of-flight spectrometry, the interaction of intense femtosecondlaser pulses with argon clusters has been studied by measuring the energyand yield of emitted ions. With two different supersonic nozzles, thedependence of average ion energy $\overline{E}$ on cluster size $\overline{n}$ in a large range of $\overline{n}\thickapprox 3\times 10^{3}\thicksim3\times 10^{6}$ has been measured. The experimental results indicate thatwhen the cluster size $\overline{n}\leq 3\times 10^{5}$, the average ionenergy $\overline{E}\propto \overline{n}^{0.5},$ Coulomb explosion is thedominant expansion mechanism. Beyond this size, the average ion energy getssaturated gradually, the clusters exhibit a mixed Coulomb-hydrodynamicexpansion behavior. We also find that with the increasing gas backingpressure, there is a maximum ion yield, the ion yield decreases as the gasbacking pressure is further increased.

Study on sputtering of gas cluster ion beams

Smoothing and cleaning effects on substrate surface by gas cluster ion beam

Irradiation effects of CO2 cluster ion beam an surface of Si substrate

Analysis of SiO2 layer formed on Si surface by CO2 cluster ion beam irradiation

Study of ion sputtering on AlxSn100-x alloy system

Materials processing by gas cluster ion beams

Large-scale Molecular Dynamics Simulation for Two Ar Clusters Impact on 4H–sic

Differential characteristics of the particles sputtered by gas cluster ions at elevated temperatures. Molecular dynamics simulation

Deposition of Size-Selected Metal Clusters Generated by Magnetron Sputtering and Gas Condensation: a Progress Review

Clustering Effects Of Sputtered Ions From Solid-Surfaces

Silicon Carbide Wafer Polishing With Gas Cluster Ion Beams

Cluster Growth in Cluster Beam Deposition Process by Direct Simulation Monte Carlo

Towards a better understanding of the surface smoothing effect in gas cluster ion beam processing with molecular dynamics simulation and experiment

Molecular Dynamics Study on the Role of Ar Ions in the Sputter Deposition of Al Thin Films

Accurate argon cluster-ion sputter yields: Measured yields and effect of the sputter threshold in practical depth-profiling by x-ray photoelectron spectroscopy and secondary ion mass spectrometry

Note: Production of Silver Nanoclusters Using a Matrix-Assembly Cluster Source with a Solid CO2 Matrix.

Ion beam sputtering of silicon: Energy distributions of sputtered and scattered ions

SPUTTERING RESEARCH OF Al-50wt％Sn ALLOY

An Optical Imaging Method for Studying the Spatial Distribution of Argon Clusters

An Investigation on the Removal Characteristics of Compound Materials During Ion Beam Sputtering Using the Kinetic Monte Carlo Method

Studies of Ion Energy and Yield from Argon Clusters Heated by Intense Femtosecond Laser Pulses