Abstract:Glass ceramic (GC) is the most promising material for objective lenses for extreme ultraviolet lithography that must meet the subnanometer precision, which is characterized by low values of high spatial frequency surface roughness (HSFR). However, the HSFR of GC is typically degraded during ion beam figuring (IBF). Herein, a developed method for constructing molecular dynamics (MD) models of GC was presented, and the formation mechanisms of surface morphologies were investigated. The results indicated that the generation of the dot-like microstructure was the result of the difference in the erosion rate caused by the difference in the intrinsic properties between ceramic phases (CPs) and glass phases (GPs). Further, the difference in the microstructure of the IBF surface under different beam angles was mainly caused by the difference in the two types of sputtering. Quantum mechanical calculations showed that the presence of interstitial atoms would result in electron rearrangement and that the electron localization can lead to a reduction in CP stability. To obtain a homogeneous surface, the effects of beam parameters on the heterogeneous surface were systematically investigated based on the proposed MD model. Then, a novel ion beam modification (IBM) method was proposed and demonstrated by TEM and GIXRD. The range of ion beam smoothing parameters that could effectively converge the HSFR of the modified surface was determined through numerous experiments. Using the optimized beam parameters, an ultrathin homogeneous modified surface within 3 nm was obtained. The HSFR of GC smoothed by ion beam modification-assisted smoothing (IBMS) dropped from 0.348 to 0.090 nm, a 74% reduction. These research results offer a deeper understanding of the morphology formation mechanisms of the GC surfaces involved in ion beam processing and may point to a new approach for achieving ultrasmooth heterostructure surfaces down to the subnanometer scale.

Towards a better understanding of the surface smoothing effect in gas cluster ion beam processing with molecular dynamics simulation and experiment

Materials processing by gas cluster ion beams

Smoothing and cleaning effects on substrate surface by gas cluster ion beam

Gaussian Mixture Models for Diatomic Gas−surface Interactions under Thermal Non-Equilibrium Conditions

1 EX / P 3-21 Plasma Behavior with Hydrogen Supersonic Molecular Beam and Cluster Jet Injection in the HL-2 A Tokamak

Surface Smoothing by Gas Cluster Ion Beam Using Decreasing Three-Step Energy Treatment

Subnanoscale Ion Beam Modification-Assisted Smoothing of Heterostructure Surfaces

Silicon Carbide Wafer Polishing With Gas Cluster Ion Beams

Cluster Growth in Cluster Beam Deposition Process by Direct Simulation Monte Carlo

Smoothing of Zno Films by Gas Cluster Ion Beam

Molecular Dynamics Simulation of Atomic Beam Bombardment on a Solid Surface

Study on sputtering of gas cluster ion beams

Gas-surface interaction features under effects of gas-gas molecules interaction in high-speed flows

Impact of surface physisorption on gas scattering dynamics

Molecular dynamics simulation of particle trajectory for the evaluation of surface accommodation coefficients

Behavior of Clusters on Smooth and Nano-Structured Surfaces

Dynamics of Collision-induced Energy Transfer

Numerical Simulation of the Nanoparticle-Surface Collision in a Liquid Jet and Its Effects on Material Removal

Reaction Dynamics of Cluster and Surface

Clustering Effects Of Sputtered Ions From Solid-Surfaces

Study of Atomic Sputtering and Transport Dynamics by Monte Carlo Simulation