Abstract:Single-crystal SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. An ultrasmooth surface with atomic surface roughness that is scratch free and subsurface damage (SSD) free is indispensable before its application. As the last process to reduce the surface roughness and remove surface defects, precision polishing of single-crystal SiC is essential. In this paper, precision polishing technologies for 4H-SiC and 6H-SiC, which are the most commonly used polytypes of single-crystal SiC, such as chemical mechanical polishing (CMP), photocatalytic chemical mechanical polishing (PCMP), plasma-assisted polishing (PAP), electrochemical mechanical polishing (ECMP), and catalyst-referred etching (CARE), were reviewed and compared with emphasis on the experimental setup, polishing mechanism, material removal rate (MRR), and surface roughness. An atomically smooth surface without SSD can be obtained by CMP, PCMP, PAP, and CARE for single-crystal SiC. However, their MRRs are meager, and the waste treatment after CMP is difficult and expensive. Moreover, PAP’s operation is poor due to the complex polishing system, plasma generation, and irradiation devices. A high MRR can be achieved by ECMP. In addition, it is an environmentally friendly precision polishing process for single-crystal SiC since the neutral salt solution is generally used as the electrolyte in ECMP. However, the formation of the egglike protrusions at the oxide/SiC interface during anodic oxidation would lead to a bigger surface roughness after ECMP than that after PAP is processed. The HF solution used in CARE was toxic, and Pt was particularly expensive. Ultrasonic vibration-assisted single-crystal SiC polishing and electrolyte plasma polishing (EPP) were discussed; furthermore, the research direction of further improving the surface quality and MRR of single-crystal SiC was prospected.

Silicon Carbide Wafer Polishing With Gas Cluster Ion Beams

Surface Smoothing by Gas Cluster Ion Beam Using Decreasing Three-Step Energy Treatment

Materials processing by gas cluster ion beams

An efficient polishing process for silicon carbide using ion implantation method

Smoothing and cleaning effects on substrate surface by gas cluster ion beam

Picosecond Laser-Assisted Chemical Mechanical Polishing (CMP): Aiming at the Si-Face of Single-Crystal 6H-Sic Wafer

Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face

Application of Atmospheric Pressure Plasma in the Ultrasmooth Polishing of SiC Optics

Surface Modification of Silicon Carbide Wafers Using Atmospheric Plasma Etching: Effects of Processing Parameters

A Review on Precision Polishing Technology of Single-Crystal SiC

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

Chemical Mechanical Polishing (CMP) of On-Axis Si-face 6H-Sic Wafer for Obtaining Atomically Flat Defect-Free Surface

Femtosecond laser modification of silicon carbide substrates and its influence on CMP process

Study of Femtosecond Laser Ablation and Polishing Process on 4H-SiC Substrate

Optimization of polishing fluid composition for single crystal silicon carbide by ultrasonic assisted chemical-mechanical polishing

Characterizations of Removal Rate and Temperature in the Inductively Coupled Plasma Etching of Silicon Carbide

Photocatalysis-Assisted Chemical Mechanical Polishing of SiC Wafer Using a Novel SiO2@TiO2 Core-Shell Composite Nanoparticles Slurry

Study on the Surface Morphology of Micro-Particles and the Oxide Layer on Silicon Carbide Crystal Using Nanosecond Green Laser Cleaning Assisted with Airflow

Ultra-Smooth Polishing of Single-Crystal Silicon Carbide by Pulsed-Ion-Beam Sputtering of Quantum-Dot Sacrificial Layers

Surface Micromorphology and Nanostructures Evolution in Hybrid Laser Processes of Slicing and Polishing Single Crystal 4H-Sic

Atomic surface induced by novel green chemical mechanical polishing for aspheric thin-walled crucibles with large diameters