Abstract:Single-crystal silicon carbide has excellent electrical, mechanical, and chemical properties. However, due to its high hardness material properties, achieving high-precision manufacturing of single-crystal silicon carbide with an ultra-smooth surface is difficult. In this work, quantum dots were introduced as a sacrificial layer in polishing for pulsed-ion-beam sputtering of single-crystal SiC. The surface of single-crystal silicon carbide with a quantum-dot sacrificial layer was sputtered using a pulsed-ion beam and compared with the surface of single-crystal silicon carbide sputtered directly. The surface roughness evolution of single-crystal silicon carbide etched using a pulsed ion beam was studied, and the mechanism of sacrificial layer sputtering was analyzed theoretically. The results show that direct sputtering of single-crystal silicon carbide will deteriorate the surface quality. On the contrary, the surface roughness of single-crystal silicon carbide with a quantum-dot sacrificial layer added using pulsed-ion-beam sputtering was effectively suppressed, the surface shape accuracy of the Ø120 mm sample was converged to 7.63 nm RMS, and the roughness was reduced to 0.21 nm RMS. Therefore, the single-crystal silicon carbide with the quantum-dot sacrificial layer added via pulsed-ion-beam sputtering can effectively reduce the micro-morphology roughness phenomenon caused by ion-beam sputtering, and it is expected to realize the manufacture of a high-precision ultra-smooth surface of single-crystal silicon carbide.

What problem does this paper attempt to address?

### Problems Addressed by the Paper This paper aims to study the roughness evolution of single-crystal silicon carbide (SiC) surfaces under pulsed ion beam sputtering and to achieve ultra-smooth processing of single-crystal silicon carbide surfaces. #### Specific Issues: 1. **High-precision manufacturing of single-crystal silicon carbide**: Single-crystal silicon carbide has excellent electrical, mechanical, and chemical properties, but due to its extremely high hardness, achieving high-precision manufacturing of its ultra-smooth surface is very difficult. 2. **Surface roughness issue**: Traditional methods such as chemical mechanical polishing (CMP) are ineffective in removing micro-cracks and roughness on the surface of single-crystal silicon carbide and can introduce impurity contamination. 3. **Roughening phenomenon of pulsed ion beam sputtering**: Direct use of pulsed ion beam sputtering can lead to a decline in the surface quality of single-crystal silicon carbide, increasing surface roughness. #### Solutions: - **Quantum dot sacrificial layer technology**: By adding a layer of quantum dots as a sacrificial layer on the surface of single-crystal silicon carbide and using pulsed ion beam sputtering technology, the increase in surface roughness can be effectively suppressed, improving surface quality. - **Experimental validation**: Through experiments comparing samples without the quantum dot sacrificial layer and those with the quantum dot sacrificial layer, the effectiveness of this method was demonstrated. - **Result analysis**: After adding the quantum dot sacrificial layer, the surface roughness of the samples was significantly reduced, reaching 0.21 nm RMS, and the surface shape accuracy converged to 7.63 nm RMS, achieving the manufacturing of an ultra-smooth surface. In summary, this paper proposes a new method combining pulsed ion beam sputtering with a quantum dot sacrificial layer to address the key challenges in the ultra-smooth processing of single-crystal silicon carbide surfaces.

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