Abstract:Molecular dynamics simulations are often used to study sputtering and thin film growth. Compressive stresses in these thin films are generally assumed to be caused by a combination of forward sputtered (peened) built-in particles and entrapped working gas atoms. While the former are assumed to hold a predominant role, the effect of the latter on the interaction dynamics as well as thin film properties are scarcely clarified (concurrent or causative). The inherent overlay of the ion bombardment induced processes render an isolation of their contribution impracticable. In this work, this issue is addressed by comparing the results of two case studies on the sputter deposition of Al thin films in Ar working gas. In the first run Ar atoms are fully retained. In the second run they are artificially neglected, as implanted Ar atoms are assumed to outgas anyhow and not alter the ongoing dynamics significantly. Both case studies have in common that the consecutive impingement of 100 particles (i.e., Ar$^+$ ions, Al atoms) onto Al(001) surfaces for ion energies in the range of 3 eV to 300 eV as well as Al/Ar$^+$ flux ratios from 0 to 1 are considered. The surface interactions are simulated by means of hybrid reactive molecular dynamics/force-biased Monte Carlo simulations and characterized in terms of mass density, Ar concentration, biaxial stress, shear stress, ring statistical connectivity profile, Ar gas porosity, Al vacancy density, and root-mean-squared roughness. Ultimately, implanted Ar atoms are found to form subnanometer sized eventually outgassing clusters for ion energies exceeding 100 eV. They fundamentally govern a variety of surface processes (e.g., forward sputtering/peening) and surface properties (e.g., compressive stresses) in the considered operating regime.

Study of ion sputtering on AlxSn100-x alloy system

SPUTTERING RESEARCH OF Al-50wt％Sn ALLOY

SPUTTERING RELATED PHENOMENA ON THE SURFACE OF Pb97.4Sn2.6 ALLOY

The impact of high current pulses electron beam on the microstructure and surface properties of Sn/Al system

Sputtering Induced by Highly Charged 208pbq+ Bombardment on Al Surface

Enhanced Sputtering Yield of Nanostructured Samples under Ar+ Cluster Bombardment

Measurements of angular distributions of sputtered material as a new tool for surface-segregation studies: Segregation in CuPt alloys

Ion-bombardment-enhanced Diffusion Phenomenon in Pb-Sn Alloy

Low-energy Sputtering Events at Free Surfaces Near Anti-Phase and Grain Boundaries in Ni3Al

DYNAMIC PROCESSES OF ALTERED LAYER FORMATION IN Cu-Pt ALLOYS UNDER ION BOMBARDMENT

Potential Sputtering of Target Ions by Arq+Pbq+ Projectiles from A Silicon Surface

Molecular Dynamics Study on the Role of Ar Ions in the Sputter Deposition of Al Thin Films

Ion Bombardment Induced Surface Microstructural Modification of Aluminum Alloy

Sputtering of CuPt Alloy

Spital Distribution of Sputtered Atoms of Molybdenum Material Measuring by the Aluminum Arch Array

Microstructural parameters estimation for sputtered Al coating via SEM, EDS, X-ray diffraction line broadening and EBSD

200 Nm–1000 Nm Spectra of Light Emitted in the Impact of 40 Ar 10+ Upon Al and Si Solid Surfaces

Study of Surface Blistering and Pinhole Formation on Argon Ion Bombarded Amorphous Alloys

Use of an energetic ion beam on the surface during physical vapor deposition

Molecular Dynamics Simulation for the Sputtering of an Al2o3 Sample Bombarded with Mev Si Ions

Sputtering of Silicon Nanopowders by an Argon Cluster Ion Beam