The Effect of Redeposition on the Ion Flux Dependence of Si Dot Pattern Formation During Ion Sputter Erosion

Wen-bin Fan,Li Ling,Le-jun Qi,Wei-qing Li,Hai-tong Sun,Chang-xin Gu,You-yuan Zhao,Ming Lu
DOI: https://doi.org/10.1088/0953-8984/18/13/004
2006-01-01
Abstract:We report an ion flux dependence study of the Si dot pattern formed on Si( 100) by Ar+ ion sputtering with the ion energy being 1.5 keV, ion dose 5 x 10(17) ions cm(-2), and ion flux ranging from 280 to 1100 mu A cm(-2). Experimental results show that the lateral dot diameter d and the ion flux f basically follow the relationship of d similar to 1/root f, and the surface roughness w decreases with increasing f in an exponential decay manner. Simulations based on a widely accepted continuum model, namely the noisy Kuramoto-Sivashinsky equation, reproduced the trend for d versus f but failed to explain that for w versus f. A redeposition consideration was then suggested. It is found that with this correction not only are the d - f and w - f relationships well explained, but the simulated surface morphology bears closer resemblance to the experimental one as well. The effect of redeposition becomes important for f > similar to 130 mu A cm(-2) as derived in this work.
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