Promoting Inter-Diffusion Behavior of Co/Si (100) Films by High Magnetic Field Annealing

Kai Wang,Yue Zhao,Qiang Wang,Guojian Li,Hongxuan Pang,Jicheng He
DOI: https://doi.org/10.1016/j.vacuum.2015.03.013
IF: 4
2015-01-01
Vacuum
Abstract:The effects of high magnetic field annealing on the inter-diffusion behavior of Co/Si (100) films were investigated using diffusion couple technique. Significant Co and Si inter-diffusion was verified by X-ray photoelectron spectroscopy. The inter-diffusion coefficients of thin-film/semiconductor were calculated. Compared to the no-field case, the inter-diffusion coefficients clearly increased when a high magnetic field of 11.5 T was applied at 300 degrees C, 350 degrees C, 450 degrees C and 500 degrees C. This effect can be attributed to an increase in the chemical potential gradient induced by magnetic free energy in a high magnetic field. For the samples at 400 degrees C, the inter-diffusion coefficients decreased when a high magnetic field of 11.5 T was applied. The phenomenon may due to the structure transformation caused by a high magnetic field. (C) 2015 Elsevier Ltd. All rights reserved.
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