Abstract:A series of low temperature processes incorporated in the silicon on insulator (SOI) formation using Si molecular beam epitaxial growth on porous silicon dramatically reduces the impurity ramp-up from the porous silicon substrate and lowers the doping level in the epitaxial Si layer. A double-layer porous silicon system with a spongy microstructure layer on top of a dendritic microstructure layer was fabricated on a moderately doped p-type Si wafer using a two-step anodization process, and was used as the substrate for Si epitaxy. An extended low temperature annealing in high vacuum was found to be helpful in stabilizing the porous silicon and making it less susceptible to microstructure change during the subsequent heat-treatment. Prior to epitaxy, a Ge-beam treatment was used to lower the temperature necessary for the Si surface cleaning. A low temperature preoxidation process stabilized the porous silicon during the subsequent high temperature oxidation. The choice of a moderately doped substrate and all these low temperature processes helped to achieve a Si epitaxial layer doping of 6 to 8 x 10(15) cm(-3), which is very close to meeting the requirement for direct device fabrication in the SOI without any additional doping compensation.

Fabrication of Silicon-Silicide-On-Insulator Substrates Using Wafer Bonding and Layer-Cutting Techniques

Buried Cosi2 Layers in Silicon on Insulator Formed by Wafer Bonding

Buried Cobalt Silicide Layer Under Thin Silicon Film Fabricated By Wafer Bonding And Hydrogen-Induced Delamination Techniques

Fabrication of SiC-on-insulator Substrate Via a Low-Temperature Plasma Activated Bonding Process

Formation of Silicon on Plasma Synthesized SiOxNy and Reaction Mechanism

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

Formation of a CoSi2 layer by Co ion implantation using a metal vapor vacuum arc ion source

Fabrication of Silicon Highly-Rich SiO<inf>x</inf>(x&#x003C;0.75) and Its Novel Resistive Switching Behaviors

Fabrication and properties of ternary silicide (CoxNi1-x) Si2 thin films

Single-crystalline SiC Integrated Onto Si-based Substrates Via Plasma-Activated Direct Bonding

Research on bubble-free Si/SiC hydrophilic bonding approach for high-quality Si-on-SiC fabrication

Formation of Silicon on Plasma Synthesized Aluminum Nitride Structure by Ion Cutting

A Low Temperature Silicon‐on‐Insulator Fabrication Process Using Si MBE on Double‐Layer Porous Silicon

Shape-controlled fabrication of micro/nanoscale triangle, square, wire-like, and hexagon pits on silicon substrates induced by anisotropic diffusion and silicide sublimation.

Tetrahedral Amorphous-Carbon Thin Films for Silicon-on-insulator Application

Fabrication of Silicon-on-Insulator Structure with Si3N4 As Buried Insulating Films by Epitaxial Layer Transfer

Epitaxial Growth and Transfer of Single Crystalline Si Thin Films on Double Layered Porous Silicon Substrate

Continuous Cosi2 Layers in Silicon Synthesized by Co-Ion Implantation

Plasma Hydrogenation of Strained Si∕SiGe∕Si Heterostructure for Layer Transfer Without Ion Implantation

H-Induced Platelet And Crack Formation In Hydrogenated Epitaxial Si/Si0.98b0.02/Si Structures

A Novel Nontraditional Approach to C2W Cu/SiO2 Hybrid Bonding