Reaction Mechanism of Ti<SUB>3</SUB>SiC<SUB>2</SUB> Formed on the Diamond

Yunchao Mu,Liang Bian,Jifeng Guo
DOI: https://doi.org/10.3724/sp.j.1077.2012.11804
IF: 1.292
2013-01-01
Journal of Inorganic Materials
Abstract:Ti3SiC2 bonded diamond materials were fabricated by spark plasma sintering using Ti/Si/TiC/diamond abrasive as the raw materials. The result showed that displace, dispalce rate and vaccum degree of Ti-Si-2TiC sample sintered by SPS were obviously changed. The Ti/Si/TiC powders were obviously sintered and transformed to TiC and Ti3SiC2 at 1200 degrees C during the sintering process. With increasing sintering temperature, Ti3SiC2 content in the samples increased. Ti3SiC2 content in the samples were 65.9%, 79.97%, 87.5% and 90.1%, respectively. Addition of (5% and 10%) appropriate amounts of diamond did not inhibit the reaction synthesis of Ti3SiC2. SEM observation showed that diamond had one close combination with the matris, and Ti3SiC2 grains grew on the surface of diamond. One formation mechanism of Ti3SiC2 on the surface of diamond was proposed, C on the surface of diamond reacted with Ti and formed TiC firstly, then TiC reacted with Ti-Si phase and formed Ti3SiC2.
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