Formation of DO23-Al3Zr by Zr Ion Implantation Using a Metal Vapour Vacuum Arc Ion Source

W Miao,K Tao,B Li,BX Liu
DOI: https://doi.org/10.1088/0022-3727/33/18/314
2000-01-01
Journal of Physics D Applied Physics
Abstract:The Al-enriched intermetallic compound DO23-Al3Zr was directly formed by Zr ion implantation into AI films at a current density of 64 mu A cm(-2) using a metal vapour vacuum are (MEVVA) ion source at a dose of 3 x 10(17) ions cm(-2). With increasing ion dose the crystallinity of the DO23-AI(3)Zr phase was gradually improved, and at a dose of 5 x 10(17) ions cm(-2) the DO23-Al3Zr layer was about 100 nm thick. The formed DO23-Al3Zr phase played a significant role in enhancing the hardness as well as the elastic modulus of the Al films.
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