Formation of NbAl3 by Nb Ion Implantation Using Metal Vapor Vacuum Arc Ion Source

W Miao,K Tao,BX Liu,B Li
DOI: https://doi.org/10.1016/s0168-583x(99)00600-x
2000-01-01
Abstract:High aluminum content intermetallic compound NbAl3 was formed by Nb ion implantation into Al films with a current density of 108 mu A cm(-2) using a metal vapor vacuum are (MEVVA) ion source. When the Nb ion dose was of 3x10(17) ions cm(-2), NbAl3 phase was formed. With increasing the ion dose, the crystallinity of NbAl3 phase was gradually improved. The NbAl3 layer with a thickness of about 1900 Angstrom was obtained on the Al surface implanted by Nb ions up to a dose of 8 x 10(17) cm(-2). The microhardness of the Nb implanted Al films was significantly increased by the NbAl3 phase. (C) 2000 Elsevier Science B.V. All rights reserved.
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