Abstract:The thermal stability and the electrical properties of HfO2 and Hf–aluminate films prepared by the pulsed laser deposition technique have been investigated by X-ray diffraction, differential thermal analysis, capacitance–voltage correlation, leakage-current measurements and high-resolution transmission electron microscopy observation, respectively. A crystallization transformation from HfO2 amorphous phase to polycrystalline monoclinic structure occurs at about 500 °C. In contrast, the amorphous structure of Hf–aluminate films remains stable at higher temperatures up to 900 °C. Rapid thermal annealing at 1000 °C for 3 min leads to a phase separation in Hf–aluminate films. Tetragonal HfO2(111) is predominant, and Al2O3 separates from Hf–aluminate and is still in the amorphous state. The dielectric constant of amorphous HfO2 and Hf–aluminate films was determined to be about 26 and 16.6, respectively, by measuring a Pt/dielectric film/Pt capacitor structure. A very small equivalent oxide thickness (EOT) value of 0.74 nm for a 3-nm physical thickness Hf–aluminate film on a n-Si substrate with a leakage current of 0.17 A/cm2 at 1-V gate voltage was obtained. The interface at Hf–aluminate/Si is atomically sharp, while a thick interface layer exists between the HfO2 film and the Si substrate, which makes it difficult to obtain an EOT of less than 1 nm.

Formation of Al3Hf by Hf ion implantation into aluminum using a metal vapor vacuum arc ion source

Quantitative depth profiling of Al3Hf phase formed by Hf ions implantation into aluminum

Formation of DO23-Al3Zr by Zr Ion Implantation Using a Metal Vapour Vacuum Arc Ion Source

Formation of NbAl3 by Nb Ion Implantation Using Metal Vapor Vacuum Arc Ion Source

High Current Ni- and Fe-ion Implantation into an Al Surface to Modify the Mechanical Properties

Formation of Intermetallic Compounds by Zr and V Ion Implantation into Aluminum

Surface Hardening of Al by High Current Fe-Ion Implantation

Modification of surface mechanical properties of aluminum by high current Mo ion implantation using a MEVVA ion source

Precipitation of (Si2-Xalx)hf in an Al-Si-Mg-Hf Alloy.

High current Ni-ion implantation into Al films

Exploring the influence of Al content on the optical and interface properties of HfAlOx mixed gate dielectric thin films and their applications in MOS devices

Effect Of Al Addition On The Microstructure And Electronic Structure Of Hfo2 Film

Modification of Surface Mechanical Properties of Aluminum by Nb Ion Implantation

Low Temperature Formation of Higher-K Cubic Phase Hfo2 by Atomic Layer Deposition on Geox/Ge Structures Fabricated by In-Situ Thermal Oxidation

Structural phase transition in the Hf–Ni system studied by ab initio calculation and ion beam mixing

First-principles study on the effects of Er/Hf ratio on the properties of L12-Al3(Er,Hf)

Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition

Non-equilibrium Alloy Phase Formation and Transformation Driven by Ion Beam Mixing in the Fe-Hf-Nb Multilayers

Comparative Study of Pulsed Laser Deposited HfO 2 and Hf–aluminate Films for High- K Gate Dielectric Applications

Amorphous alloy forming in the Fe-Hf films by IBAD technique

Al-induced Reduction of the Oxygen Diffusion in HfO2: Anab Initiostudy