Abstract:High-quality hafnium disilicide (HfSi2) has been successfully synthesized using a high-pressure and high-temperature (HPHT) method at 3 GPa and 1573 K in a DS6 × 10 MN cubic press. The modest synthesis temperature is aided by significant decreases in both liquidus and solidus temperatures at high pressure for the Si-rich portion of the Hf–Si binary system. The in situ high-pressure X-ray diffraction study yielded a bulk modulus of B0 = 124.4 ± 0.8 GPa with a fixed B0′ = 4.0 for HfSi2, which exhibits a dramatically anisotropic compressibility, with a and c axes nearly twice as incompressible as the b axis. The bulk HfSi2 as synthesized has a Vickers hardness of 6.9 ± 0.1 GPa and high thermal stability of 1163 K in air, indicating its hard and refractory ceramic properties. The core-level XPS data of Hf 4f and Si 2p have been collected on the bulk samples of HfSi2, HfSi, and Hf, as well as Si powder to examine the Hf–Si bonding in hafnium silicides. The Hf 4f7/2 binding energies are 15.0 and 14.8 eV for bulk HfSi2 and HfSi, respectively.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.inorgchem.1c01681.GSAS-refined XRD patterns of HfSi2 powder under high pressure, Vickers hardness of the commercial WC, XPS spectra of HfSi2 powder after TGA, information of HfSi synthesized using the HPHT technique in this work, and literature data on the physical properties (bulk modulus and melting point) of transition-metal disilicides (PDF)This article has not yet been cited by other publications.

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