High-Pressure and High-Temperature Synthesis and In Situ High-Pressure Synchrotron X-ray Diffraction Study of HfSi2

Weiwei Li,Pei Wang,Chao Xu,Hu Tang,Peng Ren,Zhiqing Xie,Xuefeng Zhou,Jian Chen,Shanmin Wang,Songbai Han,Yusheng Zhao,Liping Wang
DOI: https://doi.org/10.1021/acs.inorgchem.1c01681
IF: 4.6
2021-01-01
Inorganic Chemistry
Abstract:High-quality hafnium disilicide (HfSi2) has been successfully synthesized using a high-pressure and high-temperature (HPHT) method at 3 GPa and 1573 K in a DS6 x 10 MN cubic press. The modest synthesis temperature is aided by significant decreases in both liquidus and solidus temperatures at high pressure for the Si-rich portion of the Hf-Si binary system. The in situ high-pressure X-ray diffraction study yielded a bulk modulus of B-0 = 124.4 +/- 0.8 GPa with a fixed B-0' = 4.0 for HfSi2, which exhibits a dramatically anisotropic compressibility, with a and c axes nearly twice as incompressible as the b axis. The bulk HfSi2 as synthesized has a Vickers hardness of 6.9 +/- 0.1 GPa and high thermal stability of 1163 K in air, indicating its hard and refractory ceramic properties. The core-level XPS data of Hf 4f and Si 2p have been collected on the bulk samples of HfSi2, HfSi, and Hf, as well as Si powder to examine the Hf-Si bonding in hafnium silicides. The Hf 4f(7/2) binding energies are 15.0 and 14.8 eV for bulk HfSi2 and HfSi, respectively.
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