Abstract:Yttria-stabilized zirconia (YSZ) thin films on polycrystalline substrates were grown by cold-wall aerosol-assisted metallorganic chemical vapor deposition (MOCVD) at the temperatures of 673-1233 K using metal beta-diketonate chelates as precursors. Thin uniform films with amorphous structure were obtained below 673 K; when the deposition temperature increases to 773-1023 K, YSZ films appear to be a mixture of cubic and monoclinic phases; single cubic YSZ phase can be obtained at deposition temperature above 1023 K. The Y/Zr atom ratio estimated from the corresponding X-ray photoelectron spectroscopy peaks is less than the feed ratio, which can be interpreted by different transfer resistance of Y and Zr intermediates diffusing to the substrate surface. The films obtained at 673-1023 K possess a layer structure originated from low mobility of the absorbed species. Along with the increase of the deposition temperature, the grains become mature and larger, and then unite with each other to form a continuous columnar film. Mass transport dominates the growth process within lower temperatures, and homogeneous reaction will interrupt the growth at increasingly high temperatures. Growth rate expression with respect to temperature, pressure, gas flow rate, and metal concentration of precursor solutions was deduced assuming deposition of mass-transport limited mechanism, which is consistent with the experimental results. (c) 2005 The Electrochemical Society. All rights reserved.

Deposition of high k ZrO/sub 2/ thin films by high vacuum electron beam evaporation at room temperature

Deposition of high k ZrO2 thin films by high vacuum electron beam evaporation at room temperature

High-Quality ZrO2 Thin Films Deposited on Silicon by High Vacuum Electron Beam Evaporation

Fabrication and Characterization of Y2O3 Stabilized ZrO2 Films Deposited with Aerosol-Assisted MOCVD

Formation and Rate Processes of Y2o3 Stabilized Zro2 Thin Films from Zr(Dpm)(4) and Y(Dpm)(3) by Cold-Wall Aerosol-Assisted Mocvd

The Thermal Stability of Zirconium Aluminate High-K Film on Strained SiGe Layer

Interfacial and microstructural properties of zirconium oxide thin films prepared directly on silicon

Mechanical Properties Of Zirconia Thin Films Deposited By Filtered Cathodic Vacuum Arc

Infrared And Raman Spectroscopic Studies Of Optically Transparent Zirconia (Zro2) Films Deposited By Plasma-Assisted Reactive Pulsed Laser Deposition

Roughness and Light Scattering Properties of ZrO 2 Thin Films Deposited by Electron Beam Evaporation

Structure and Thermal Stability of (zr0.6al0.4)o1.8 Thin Film on Strained SiGe Layer

Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone

Deposition and growth kinetics studies of thin zirconium dioxide films by UVILS-CVD

ZrO2 Films Deposited by Photo-Cvd at Low Temperatures

Pulsed Laser Deposition of Zirconium Silicate Thin Films As Candidate Gate Dielectrics

Structure Analysis of Zirconium Films Prepared by Electron Beam Heating Evaporation and Resistance Heating Evaporation

Structure and Dielectric Properties of Ultra-Thin ZrO2 Films for High- K Gate Dielectric Application Prepared by Pulsed Laser Deposition

X-ray Diffraction and Electrical Characterization of Photo-Cvd Zirconium Oxide Layers

Thin-film Barrier Performance of Zirconium Oxide Using the Low-Temperature Atomic Layer Deposition Method.

Structure and dielectric properties of Zr-Al-O thin films prepared by pulsed laser deposition