Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Thermal Relaxation Behaviour of As in Supersaturated Si Studied by Channeling, Hall Effect Measurements and Transmission Electron Microscopy

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Lattice Location of Supersaturated Arsenic Atoms in Silicon Studied by Channeled Ion Beam

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Implantation-dominated Junction Depths of Low-Temperature and Electron-Beam-annealed As Source—drain Regions

Evolution of secondary defects in arsenic implanted Si

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Arsenic Precipitation in Heavily Arsenic‐Doped Czochralski Silicon

Growth Mechanism of Eutectic Si in Super-Gravity Solidified Al-Si Alloy During Annealing

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Interface Confinement and Local Structure in Nc-Si/a-sinxmultilayers (nc≡nanocrystalline, A≡amorphous)

Structural Relaxation of Amorphous Silicon Carbide Thin Films in Thermal Annealing

Rapid Thermal Annealing of Arsenic Implanted Si1−xGex Epilayers

Interface Confinement And Local Structure In Nc-Si/A-Sinx Multilayers (Nc Equivalent To Nanocrystalline, A Equivalent To Amorphous)

The Influence of Annealing Temperature Upon the Structure of A-Si:H/c-si Thin Films

Thermal Annealing Effects on a Compositionally Graded SiGe Layer Fabricated by Oxidizing a Strained SiGe Layer

Annealing-induced Interfacial Atomic Intermixing in InAs/GaSb Type II Superlattices

Thermal Annealing of A-Si : H/A-Sinx : H Multilayers

Annealing effect of Si/Si1-x/Gex/Si single quantum wells studied by admittance spectroscopy

Effect of Rapid Thermal Annealing on the Strain Relaxation in Heavily Boron-Doped Silicon Epitaxial Layer

Charge carrier induced lattice strain and stress effects on As activation in Si