Abstract:Over the past two decades, prototype devices for future classical and quantum computing technologies have been fabricated by using scanning tunneling microscopy and hydrogen resist lithography to position phosphorus atoms in silicon with atomic-scale precision. Despite these successes, phosphine remains the only donor precursor molecule to have been demonstrated as compatible with the hydrogen resist lithography technique. The potential benefits of atomic-scale placement of alternative dopant species have, until now, remained unexplored. In this work, we demonstrate the successful fabrication of atomic-scale structures of arsenic-in-silicon. Using a scanning tunneling microscope tip, we pattern a monolayer hydrogen mask to selectively place arsenic atoms on the Si(001) surface using arsine as the precursor molecule. We fully elucidate the surface chemistry and reaction pathways of arsine on Si(001), revealing significant differences to phosphine. We explain how these differences result in enhanced surface immobilization and in-plane confinement of arsenic compared to phosphorus, and a dose-rate independent arsenic saturation density of 0.24 ± 0.04 monolayers. We demonstrate the successful encapsulation of arsenic delta-layers using silicon molecular beam epitaxy, and find electrical characteristics that are competitive with equivalent structures fabricated with phosphorus. Arsenic delta-layers are also found to offer confinement as good as similarly prepared phosphorus layers, while still retaining >80% carrier activation and sheet resistances of <2 kΩ/square. These excellent characteristics of arsenic represent opportunities to enhance existing capabilities of atomic-scale fabrication of dopant structures in silicon, and may be important for three-dimensional devices, where vertical control of the position of device components is critical.

Lattice Location of Supersaturated Arsenic Atoms in Silicon Studied by Channeled Ion Beam

Arsenic Precipitation in Heavily Arsenic‐Doped Czochralski Silicon

Thermal Relaxation Behaviour of As in Supersaturated Si Studied by Channeling, Hall Effect Measurements and Transmission Electron Microscopy

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Evolution of secondary defects in arsenic implanted Si

Redistribution of Dopant Arsenic During Silicide Formation

Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication

Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication

Interstitial diffusion of arsenic in silicon

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Implantation-dominated Junction Depths of Low-Temperature and Electron-Beam-annealed As Source—drain Regions

Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with Low-Energy High-Dose Ion Implantation

Si-Tips with Saturated High Concentration Arsenic Dopant at the Nano-Apexes for Uniform Field Electron Emission

Analytical Modeling of Nonlinear Diffusion of Arsenic in Silicon

Arsenic Redistribution Induced By Low-Temperature Ni Silicidation At 450 Degrees C On Shallow Junctions

Arsenic redistribution induced by low-temperature Ni silicidation at 450°C on shallow junctions

Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy

Recrystallization, redistribution, and electrical activation of strained-silicon/Si0.7Ge0.3 heterostructures with implanted arsenic

Quasi-Saturated Arsenic Concentration and Uniform Electron Emission by Regulating Thermal Oxidation of Si Nanotips