Abstract:The nanostructure‐controllable TaSi2 arrays with vertically aligned nanotips are produced through a novel and straightforward method, involving advanced directional solidification, heat treatment, and etching process. The enhanced sharpness and high regularity of the TaSi2 nanotip array contribute to its favorable field emission performance, thereby advancing the potential application of TaSi2 as a cold cathode material in electronic devices. Recognizing the strong potential of cold cathodes for important commercial applications in fields such as electronics, there is a growing interest in the exploration of novel 1D nanomaterials. Among various cold cathode materials, TaSi2 is of great interest for its outstanding field emission performance. In this work, the Si‐TaSi2 eutectic composite with nano‐sized highly oriented TaSi2 fibers and semi‐coherent phase interfaces is prepared by the laser floating zone melting technique with a very high‐temperature gradient of 6000 K cm−1 at a solidification rate of 200 μm s−1. On the basis of directionally solidified Si‐TaSi2 eutectic composite, well‐aligned TaSi2 nanorod and nanotip arrays are fabricated by inductively coupling plasma (ICP) etching process and HNO3/HF wet etching process, respectively. The field emission measurements show that the field enhancement factor, turn‐on electric field, and effective work function are strongly affected by tip morphologies. The TaSi2 array with regular nanotip structure possesses the best field emission characteristic among all TaSi2 nanostructures, with a relatively low turn‐on field of 4.8 V μm−1 and a high current density of 733 μA cm−2. These findings preliminarily establish a clear relationship between the performance and structure of the array, providing technical guidance for the application of this material in electronic devices.

Si-Tips with Saturated High Concentration Arsenic Dopant at the Nano-Apexes for Uniform Field Electron Emission

Quasi-Saturated Arsenic Concentration and Uniform Electron Emission by Regulating Thermal Oxidation of Si Nanotips

Insight into the Field-Induced Surface Deformation of Si Nanoapex and the Achieving of Highly Reliable Gated Si Nanoemitters

Mechanism of Non-Saturated Field Electron Emission from Gated P-Type Si Tips

P-Type Si-Tips With Integrated Nanochannels for Stable Nonsaturated High Current Density Field Electron Emission

Field electron emission from ultra-high density Si nanotip arrays

Field Electron Emission of Si Nanotips with Apexes of Various Compositions

Silicon Tip Arrays with Ultrathin Amorphous Diamond Apexes

Uniform Current Supply in Gated P-Type Si-Tips for Achieving High-Performance Field Electron Emitter Array

Self-modulated Field Electron Emitter: Gated Device of Integrated Si Tip-on-nano-channel

Optimisation of Arsenic Concentration Inn Amorphous Selenium Based Photo-detector Driven By Nitrogen (n)-doped CVD Diamond

Fabrication and field emission property of a Si nanotip array

Insight into TaSi2 Nanostructures with Different Morphologies and Their Field Emission Properties

Field electron emission from gated Si tip arrays with DLC apexes

Enhancing Electron Emission From Silicon Tip Arrays By Using Thin Amorphous Diamond Coating

Si Tip with Integrated Nano-Channel: Self-heated and Self-Current-limited Field Electron Emitter

Aluminum-enhanced sharpening of silicon nanocones

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si

Lattice Location of Supersaturated Arsenic Atoms in Silicon Studied by Channeled Ion Beam

Evolution of secondary defects in arsenic implanted Si