Abstract:The nanostructure‐controllable TaSi2 arrays with vertically aligned nanotips are produced through a novel and straightforward method, involving advanced directional solidification, heat treatment, and etching process. The enhanced sharpness and high regularity of the TaSi2 nanotip array contribute to its favorable field emission performance, thereby advancing the potential application of TaSi2 as a cold cathode material in electronic devices. Recognizing the strong potential of cold cathodes for important commercial applications in fields such as electronics, there is a growing interest in the exploration of novel 1D nanomaterials. Among various cold cathode materials, TaSi2 is of great interest for its outstanding field emission performance. In this work, the Si‐TaSi2 eutectic composite with nano‐sized highly oriented TaSi2 fibers and semi‐coherent phase interfaces is prepared by the laser floating zone melting technique with a very high‐temperature gradient of 6000 K cm−1 at a solidification rate of 200 μm s−1. On the basis of directionally solidified Si‐TaSi2 eutectic composite, well‐aligned TaSi2 nanorod and nanotip arrays are fabricated by inductively coupling plasma (ICP) etching process and HNO3/HF wet etching process, respectively. The field emission measurements show that the field enhancement factor, turn‐on electric field, and effective work function are strongly affected by tip morphologies. The TaSi2 array with regular nanotip structure possesses the best field emission characteristic among all TaSi2 nanostructures, with a relatively low turn‐on field of 4.8 V μm−1 and a high current density of 733 μA cm−2. These findings preliminarily establish a clear relationship between the performance and structure of the array, providing technical guidance for the application of this material in electronic devices.

Aluminum-enhanced sharpening of silicon nanocones

Field electron emission from ultra-high density Si nanotip arrays

Fabrication And Field Emission Study Of Atomically Sharp High-Density Tungsten Nanotip Arrays

Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si

Fabrication and field emission property of a Si nanotip array

Fabrication of the Highly Ordered Silicon Nanocone Array With Sub-5 nm Tip Apex by Tapered Silicon Oxide Mask

Electrochemical Lithography: Fabrication of Nanoscale Si Tips by Porous Anodization of Al/Si Waferelectronic Supplementary Information (ESI) Available: Cartoon of Tip Formation and Discussion on the Sample Anodising under 40 V Dc. See Http://Www.rsc.org/suppdata/cc/b3/b315810a/

Controlled growth of SiC flexible field emitters with clear and sharp tips

Insight into TaSi2 Nanostructures with Different Morphologies and Their Field Emission Properties

One-Step, Catalyst-Free, Scalable in Situ Synthesis of Single-Crystal Aluminum Nanowires in Confined Graphene Space

TiO2 Nanotip Arrays: Anodic Fabrication and Field-Emission Properties

Aligned SiC Porous Nanowire Arrays with Excellent Field Emission Properties Converted from Si Nanowires on Silicon Wafer

Field Electron Emission of Si Nanotips with Apexes of Various Compositions

Quasi-Saturated Arsenic Concentration and Uniform Electron Emission by Regulating Thermal Oxidation of Si Nanotips

Electron Field Emission Characteristics from Single-crystal Silicon Nanoarrays Fabricated by Direct Lithography with Nanosphere Mask

10.5: Field emission properties of atomically sharp tungsten nanotip arrays fabricated by a novel nanocasting method

Efficient Fabrication of Carbon Nanotube Micro Tip Arrays by Tailoring Cross-Stacked Carbon Nanotube Sheets.

Stable Field Emission from Vertically Oriented SiC Nanoarrays

Tunable field emission properties of well-aligned silicon nanowires with controlled aspect ratio and proximity

Design and fabrication of wafer-scale highly uniform silicon nanowire arrays by metal-assisted chemical etching for antireflection films

Well-aligned SiC nanoneedle arrays for excellent field emitters