Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si

Ke Sun,Wei Zhang,Biyun Li,Jae Young Lee,Ya-Hong Xie,Thomas Schroeder,Jens Katzer,Xinyu Wei,Thomas P. Russell
DOI: https://doi.org/10.1109/tnano.2012.2208472
2012-01-01
IEEE Transactions on Nanotechnology
Abstract:Sharpness of field emitter tips is one of the key factors to achieve excellent field emission performance. In order to sharpen the tips to atomic scale, a new method combining the bottom-up process of wafer-scale nanopattern formation via self-assembly of diblock copolymer with the top-down process of anisotropic etching of Si followed by nanocasting is developed. Geometrical hindrance in the oxidation of Si at nanometer scale is exploited to further sharpen the field emission tips.
What problem does this paper attempt to address?