Abstract:The nanostructure‐controllable TaSi2 arrays with vertically aligned nanotips are produced through a novel and straightforward method, involving advanced directional solidification, heat treatment, and etching process. The enhanced sharpness and high regularity of the TaSi2 nanotip array contribute to its favorable field emission performance, thereby advancing the potential application of TaSi2 as a cold cathode material in electronic devices. Recognizing the strong potential of cold cathodes for important commercial applications in fields such as electronics, there is a growing interest in the exploration of novel 1D nanomaterials. Among various cold cathode materials, TaSi2 is of great interest for its outstanding field emission performance. In this work, the Si‐TaSi2 eutectic composite with nano‐sized highly oriented TaSi2 fibers and semi‐coherent phase interfaces is prepared by the laser floating zone melting technique with a very high‐temperature gradient of 6000 K cm−1 at a solidification rate of 200 μm s−1. On the basis of directionally solidified Si‐TaSi2 eutectic composite, well‐aligned TaSi2 nanorod and nanotip arrays are fabricated by inductively coupling plasma (ICP) etching process and HNO3/HF wet etching process, respectively. The field emission measurements show that the field enhancement factor, turn‐on electric field, and effective work function are strongly affected by tip morphologies. The TaSi2 array with regular nanotip structure possesses the best field emission characteristic among all TaSi2 nanostructures, with a relatively low turn‐on field of 4.8 V μm−1 and a high current density of 733 μA cm−2. These findings preliminarily establish a clear relationship between the performance and structure of the array, providing technical guidance for the application of this material in electronic devices.

Self-modulated Field Electron Emitter: Gated Device of Integrated Si Tip-on-nano-channel

Si Tip with Integrated Nano-Channel: Self-heated and Self-Current-limited Field Electron Emitter

P-Type Si-Tips With Integrated Nanochannels for Stable Nonsaturated High Current Density Field Electron Emission

Field-induced Hot-Electron Emission Model for Wide-Band-gap Semiconductor Nanostructures

Gated Si-Tip With On-Tip Integrated Gate-All-Around Field Effect Transistor for Actively Controlled Field Electron Emission

Hot electron field emission via individually transistor-ballasted carbon nanotube arrays.

Integrated ZnO Nano-Electron-Emitter with Self-Modulated Parasitic Tunneling Field Effect Transistor at the Surface of the P-Si/zno Junction

Mechanism of Non-Saturated Field Electron Emission from Gated P-Type Si Tips

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Si Nanowire With Integrated Space-Charge- Limited Conducted Schottky Junction for Enhancing Field Electron Emission and Its Gated Devices

Band-to-Band Tunneling-Dominated Thermo-Enhanced Field Electron Emission from P-Si/zno Nanoemitters.

Fabrication of Vertically Aligned Si Nanowires and Their Application in A Gated Field Emission Device

Insight into TaSi2 Nanostructures with Different Morphologies and Their Field Emission Properties

High-Performance Field Emitters Based on SiC Nanowires with Designed Electron Emission Sites

Thermo-enhanced Field Electron Emission by Bandto-Ban Tunneling from P-Si/zno Nano-Emitters

Uniform Current Supply in Gated P-Type Si-Tips for Achieving High-Performance Field Electron Emitter Array

Field electron emission from ultra-high density Si nanotip arrays

Fabrication and field emission property of a Si nanotip array

Stable Field Emission from Vertically Oriented SiC Nanoarrays

Strong Electron Field Emission from Nano-CdS Modified Porous Silicon

Insight into the Field-Induced Surface Deformation of Si Nanoapex and the Achieving of Highly Reliable Gated Si Nanoemitters