Abstract:Integrated field emission electron sources with low driving voltage are desired for micro/nano vacuum electronics. Herein, we demonstrate the enhanced and stable electron emission from crystalline gold–silver (Au–Ag) alloy nanoparticle capped Si nanowires (SiNWs) and the achieved gated electron sources with low driving voltage (<50 V). Thermally induced self-assembly hemispherical (50–80 nm) crystalline Au–Ag nanoparticles were prepared and used as masks in plasma etching to form vertically aligned high aspect ratio (~14) SiNWs. The nanoparticles were preserved after the etching, forming in situ integrated Au–Ag/Si junctions with each individual SiNWs. The SiNWs with capped nanoparticles possess superior field emission current density (45.80 mA/cm<sup>2</sup>) and current stability (fluctuation ~6%). A self-aligned process was developed to fabricate gated field emission devices, using the Au–Ag nanoparticle capped SiNWs as cathode. The gated devices showed field emission at low gate voltage (69.52- $mu text{A}$ /cm<sup>2</sup> at 42.1 V). Experimental and numerical simulation studies demonstrated the Au–Ag/Si contact behaved as space-charge-limited (SCL) Schottky conduction. The idea behind the enhancing and stable emission is that the SCL–Schottky junction undergoes a process of negative feedback and thus suppressed the current and shot-noise from the outstanding SiNWs. Accordingly, more SiNWs were activated and contributed stable and higher field emission current.

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On-Chip Integrated Si-tip Field Electron Emission Vacuum Transistor with Saturated Output Characteristics

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Field-emission triodes with integrated anodes

Gate Electrostatic Controllability Enhancement in Nanotube Gate all Around Field Effect Transistor

P-Type Si-Tips With Integrated Nanochannels for Stable Nonsaturated High Current Density Field Electron Emission

Double Channeled Nanotube Gate All Around Field Effect Transistor with Drive Current Boosted

Fabrication and electrical characteristics of carbon nanotube field emission microcathodes with an integrated gate electrode

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Mechanism of Non-Saturated Field Electron Emission from Gated P-Type Si Tips

Fabrication of 80-Nm T-gate High Indium In0.7Ga0.3As/In0.6Ga0.4As Composite Channels Mhemt on GaAs Substrate with Simple Technological Process

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

HyFET—A GaN/SiC Hybrid Field-Effect Transistor

Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High- Metal Gates with Record High Performance

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Si Nanowire With Integrated Space-Charge- Limited Conducted Schottky Junction for Enhancing Field Electron Emission and Its Gated Devices

Uniform Current Supply in Gated P-Type Si-Tips for Achieving High-Performance Field Electron Emitter Array

A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel field effect transistor