Abstract:Monolithic integration of complementary field-effect transistor (CFET) with two-dimensional (2D) materials channels has been challenging due to the deteriorated performance of p-type transistors, especially using top-gate dielectric. In this work, we demonstrate monolithic 3D stacking CFET based on chemical-vapor-deposition (CVD) grown 2D materials channels for low-power integrated circuits (ICs). The top gate p-channel bilayer WSe <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> transistor is optimized by low-temperature post-metal annealing, achieving a record-high $\text{I}_{\text{o}\text{n}}$ of -594$\mu$A/$\mu$m and $\text{G}_{\text{m}}$ of -244$\mu$S/$\mu$m at $\text{V}_{\text{d}}=-2$V with a short $\text{L}_{\text{c}\text{h}}=135$ nm, far exceeding previous results. Furthermore, full-output-swing inverters with rail-to-rail operations and below-nanowatt low power are achieved owing to the symmetrical threshold voltages for WSe <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> pFETs and MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> nFETs. The 4T SRAM and 16T half-adder circuit units based on CFET design are also experimentally demonstrated for the first time, presenting the superiority of CFET in performance, power, and area (PPA).

On-Chip Integrated Si-tip Field Electron Emission Vacuum Transistor with Saturated Output Characteristics

Gated Si-Tip With On-Tip Integrated Gate-All-Around Field Effect Transistor for Actively Controlled Field Electron Emission

Self-modulated Field Electron Emitter: Gated Device of Integrated Si Tip-on-nano-channel

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

Nanoscale Vacuum Field Emission Triode With a Double Gate Structure

Field-emission triodes with integrated anodes

Si Tip with Integrated Nano-Channel: Self-heated and Self-Current-limited Field Electron Emitter

High performance tunnel field-effect transistor by gate and source engineering.

Superior integrated field emission cathode with ultralow turn‐on field and high stability based on SiC nanocone arrays

A Vacuum Transistor Based on Electron Emission From SiOx Tunneling Diodes

Performance Improvement of Si Pocket-Tunnel Fet with Steep Subthreshold Slope and High I-On/I-Off Ratio

TCAD Simulations of Reconfigurable Field-Effect Transistor with Embedded-Fin-Contact to Improve On-Current

Wafer-Scale Fabricated On-Chip Thermionic Electron Sources With an Integrated Extraction Gate

P-Type Si-Tips With Integrated Nanochannels for Stable Nonsaturated High Current Density Field Electron Emission

Vacuum Field Emission Transistors with Small Gate-Cathode Overlapping Areas: a Simulation Study

Top-Gate CVD WSe2 pFETs with Record-High I-d similar to 594 mu A/mu m, G(m)similar to 244 mu S/mu m and WSe2/MoS2 CFET based Half-adder Circuit Using Monolithic 3D Integration

Top-Gate CVD WSe2 Pfets with Record-High Id~594 Μa/μm, Gm~244 Μs/μm and WSe2/MoS2 CFET Based Half-adder Circuit Using Monolithic 3D Integration

Top-Gate CVD WSe<inf>2</inf> pFETs with Record-High I<inf>d</inf>~594 μA/μm, G<inf>m</inf>~244 μS/μm and WSe<inf>2</inf>/MoS<inf>2</inf> CFET based Half-adder Circuit Using Monolithic 3D Integration

An On-Chip Vacuum Triode Based on Thermionic Electron Emission from Super-Aligned Carbon Nanotube Films

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio