Self-Aligned, Gated Arrays of Individual Nanotube and Nanowire Emitters
L Gangloff,E Minoux,Kbk Teo,P Vincent,Vt Semet,Vt Binh,Mh Yang,Iyy Bu,Rg Lacerda,G Pirio,Jp Schnell,D Pribat,Dg Hasko,Gaj Amaratunga,Wi Milne,P Legagneux
DOI: https://doi.org/10.1021/nl049401t
IF: 10.8
2004-01-01
Nano Letters
Abstract:We demonstrate the production of integrated-gate nanocathodes which have a single carbon nanotube or silicon nanowire/whisker per gate aperture. The fabrication is based on a technologically scalable, self-alignment process in which a single lithographic step is used to define the gate, insulator, and emitter. The nanotube-based gated nanocathode array has a low turn-on voltage of 25 V and a peak current of 5 μA at 46 V, with a gate current of 10 nA (i.e., 99% transparency). These low operating voltage cathodes are potentially useful as electron sources for field emission displays or miniaturizing electron-based instrumentation.