Fabrication of Carbon Nanotube Lateral Field Emitters

SB Lee,AS Teh,KBK Teo,M Chhowalla,DG Hasko,WI Milne,GAJ Amaratunga,H Ahmed

DOI: https://doi.org/10.1088/0957-4484/14/2/318

IF: 3.5

2003-01-01

Nanotechnology

Abstract:We report on the fabrication and field emission of carbon nanotube lateral field emitters. Due to its high aspect ratio and mechanical strength, we use vertically aligned multi-wall carbon nanotubes prepared by plasma-enhanced chemical vapour deposition as cathodes, which makes the fabrication of cantilever type lateral field emitters possible. The emission characteristics show that the field emission initiates at 11-17 V. The device has high geometrical enhancement factors (9.3 x 10(6) cm(-1)) compared to standard Spindt tips, which may be due to increased field concentration at the nanotube tip and the close proximity of the anode (< 1 mum). The relative ease of fabrication compared to vertical field emitters and enhanced field emission characteristics observed makes the carbon nanotube lateral field emitter a good candidate for future integrated nano-electronic devices.