Abstract:An electro‐thermally actuated nanomechanical non‐volatile switch (ETAN‐NVS) with an out‐of‐plane electrode configuration is proposed. The fabricated ETAN‐NVS exhibits outstanding performance, including CMOS‐level voltage ( 108), and exceptional reliability (>1300 cycles). These characteristics meet stringent requirements for use in hybrid CMOS‐NEM circuit applications. The rapid growth of data‐intensive applications has significantly heightened the concerns about power consumption in current computing systems. From this perspective, there have been substantial efforts to implement ultra‐low power systems by integrating nanoelectromechanical non‐volatile switches (NEM‐NVS) with near‐zero leakage current into standard complementary metal‐oxide‐semiconductor (CMOS) circuits. To practically harness the potential of the NEM‐NVS, it is imperative to achieve high performance, such as low voltage, high on/off ratio, and high reliability, while simultaneously ensuring wafer‐scale CMOS compatibility. However, achieving these requirements is still challenging, primarily due to their electrostatic operation, in‐plane electrode configuration, and conventional fabrication methods. Here, an electro‐thermally actuated nanomechanical non‐volatile switch (ETAN‐NVS) with an out‐of‐plane electrode configuration along with an 8‐inch wafer‐scale CMOS‐compatible fabrication method is reported. By introducing the electrothermal mechanism into a vertically actuated buckling nanostructure, the fabricated ETAN‐NVS attains CMOS‐level voltage ( 108), and exceptional reliability (>1300 cycles). Moreover, a successful wafer‐scale demonstration of the ETAN‐NVS using only a CMOS‐compatible process paves the way for 3D integration with CMOS logic.

Nanoelectromechanical Switch with Low Voltage Drive

Fabrication of A Nanoelectromechanical Switch Using A Suspended Carbon Nanotube

Nanoelectromechanical Switches with Vertically Aligned Carbon Nanotubes

Nanoelectromechanical DRAM for Ultra-Large-scale Integration (ULSI)

Nanotube Based Vertical Nano-Devices For High Integration Density

Lorentz Force-Actuated Bidirectional Nanoelectromechanical Switch with an Ultralow Operation Voltage

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Wafer‐Scale CMOS‐Compatible Electro‐Thermally Actuated Nanomechanical Non‐Volatile Switch with Out‐of‐Plane Electrode Configuration

Design and Modeling of Carbon Nanotube Electromechanical Switches for Logic Device Application

Field Emission Vacuum Power Switch Using Vertically Aligned Carbon Nanotubes

Nanotube and Nanowire Transistors

A Nanogripper Employing Aligned Multiwall Carbon Nanotubes

Carbon-Carbon Contacts for Robust Nanoelectromechanical Switches

Carbon Nanotube Technology For Solid State And Vacuum Electronics

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Fabrication of Carbon Nanotubes on Interdigitated Metal Electrode for Switchable Nanophotonic Devices

Cnt Based Mechanical Devices for Ulsi Memory

NEMS Based Logic and Memory Circuits

Substrate-engineered GGNMOS for low trigger voltage ESD in 65 nm CMOS process.

A Large Scale Fabrication of Graphene Based Nano-electromechanical Contact Switches With Ultra-low Pull-in Voltage

Stacking of nanocrystalline graphene for Nano-Electro-Mechanical (NEM) actuator applications