Optimisation of Arsenic Concentration Inn Amorphous Selenium Based Photo-detector Driven By Nitrogen (n)-doped CVD Diamond

Ichitaro Saito,Tomoaki Masuzawa,Hisato Yamaguchi,H. Okamura,Takatoshi Yamada,T. Butler,Nalin L. Rupesinghe,Gehan A. J. Amaratunga,Ken Okano
DOI: https://doi.org/10.1109/ivnc.2006.335231
2006-01-01
Abstract:In this paper, a) a-Se, b) lightly As doped a-Se and c) heavily As doped a-Se films were fabricated by multi-layered vacuum evaporation method as introduced in previous report. To explain briefly, Se and As 2Se3 were charged into the boat as the evaporation source and the sample holder rotates on top of both sources to create a multi-layered film. A slit was introduced on top of the As2Se 3 to limit the concentration of As within the film. X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) were carried out for each of these samples in order to identify the As concentration within the film. The photoconductivity of the film was measured and each of the films were illuminated with halogen light at different intensities
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