Abstract:Active matrix flat panel imagers (AMFPIs) with thin-film transistor (TFT) arrays have become the dominant technology for digital x-ray imaging. However, their performance is degraded by electronic noise in low dose imaging applications. One potential solution is to overcome electronic noise using avalanche gain in an amorphous selenium (a-Se) photoconductor in indirect AMFPI, known as the scintillating high-gain avalanche rushing photoconductor AMFPI (SHARP-AMFPI). We previously developed two SHARP-AMFPI prototypes, however both have several areas of desired improvement. In this work, we fabricate and characterize HARP samples with a composite hole blocking layer (HBL) structure to reliably maintain avalanche fields while reducing temporal effects, as well as samples with tellurium (Te) alloyed a-Se to increase the optical quantum efficiency (OQE) to thallium doped cesium iodide (CsI:Tl) columnar scintillators. Our measurements show that the composite HBL has improved temporal performance over the original prototype, with ghosting below 3% at 10 mR equivalent exposure and no noticeable lag observed. We also show that the layer has comparable dark current to the previously used organic HBL and can reach an avalanche gain of 16. We aim to further reduce the dark current by improving the formulation of the n-type metal oxide layer using different deposition methods. Introducing Te-alloying to HARP samples shows an increase in OQE from 0.018 to 0.43 for 532 nm light. The addition of Te resulted in increased lag, attributed to charge trapping within the layer. Future work will investigate arsenic and chlorine co-doping to restore charge transport in this layer.

Durability and Photo-Electric Characteristics of a Mille-Feuille Structured Amorphous Selenium (A-Se)–arsenic Selenide (as2se3) Multi-Layered Thin Film

Anneal-Induced Degradation of Amorphous Selenium Characterized by Photoconductivity Measurements

Improved temporal performance and optical quantum efficiency of avalanche amorphous selenium for low dose medical imaging

Characterizations of a-Se based photodetectors using X-ray photoelectron spectroscopy and Raman spectroscopy

Optimisation of Arsenic Concentration Inn Amorphous Selenium Based Photo-detector Driven By Nitrogen (n)-doped CVD Diamond

Effect of Annealing Conditions on the Physio-Chemical Properties of Spin-Coated As2se3 Chalcogenide Glass Films

Structure, Morphology, and Photoelectric Performances of Te-Sb 2 Se 3 Thin Film Prepared via Magnetron Sputtering.

Structure, Morphology, and Photoelectric Performances of Te-Sb<sub>2</sub>Se<sub>3</sub>Thin Film Prepared via Magnetron Sputtering

Investigations On Structural, Optical And X-Radiation Responsive Properties Of A-Se Thin Films Fabricated By Thermal Evaporation Method At Low Vacuum Degree

Structure, Morphology, and Photoelectric Performances of Te-Sb<sub>2</sub>Se<sub>3</sub> Thin Film Prepared via Magnetron Sputtering

A Transparent Ultraviolet Triggered Amorphous Selenium P-N Junction

Structure and photo-induced volume changes of obliquely deposited amorphous selenium

Si/SnSe2 Multilayer Films for Phase Change Memory Applications

Improved Thermal Stability of Antimony‐doped Amorphous Selenium Film for X‐ray Flat‐panel Detectors

Towards Air Stability of Ultra-Thin GaSe Devices: Avoiding Environmental and Laser-Induced Degradation by Encapsulation

Angle-Dependent Photoinduced Changes of Near-Infrared Transmission in Amorphous Selenium Films

Deposition Time Effects on Optical Gap, Dark Conductivity and X-ray Photoresponse Properties of Thermal Evaporated A-Se Thin Films

PHOTOINDUCED EFFECTS IN AMORPHOUS CHALCOGENIDE FILMS

Enhancement of photoluminescence intensity by photoinduced interdiffusion in nanolayered a-Se∕As2S3 films

Evaporation Time Effects on Structural, Optical and X-ray Photoresponse Properties of Thermal Evaporated A-Se Thin Films at Low Vacuum Degree