PHOTOINDUCED EFFECTS IN AMORPHOUS CHALCOGENIDE FILMS

刘启明,胡婷,赵修建,干福熹
DOI: https://doi.org/10.3321/j.issn:0454-5648.2009.06.007
2009-01-01
Abstract:Amorphous semiconductor chalcogenide As_2S_3,As_2Se_3,GeS_2,GeSe_2,Ge_(20)As_(25)S_(55),Ge_(20)As_(25)Se_(55),and Ge_(10)As_(40)S_(20)Se_(30) films were prepared by the thermal evaporation and studied by the X-ray diffraction,infrared,scanning electron microscope,and transmission electron microscope.With Ar ion laser irradiation,the mechanisms of photodarkening,photobleaching and photocrystallization were discussed.Photodarkening was observed in AS_2S_3 and As_2Se_3 films,photobleaching was observed in GeS_2,GeSe_2,Ge_(20)As_(25)S_(55), and Ge_(20)As_(25)Se_(55) films,and photoinduced crystallization was observed in all prepared films after Ar ion laser illumination.
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