Arsenic redistribution induced by low-temperature Ni silicidation at 450°C on shallow junctions

Yu-Long Jiang,Guo-Ping Ru,Xin-Ping Qu,Bing-Zong Li,Aditya Agarwal,John Poate,Khalid Hossain,Wayne Holland
DOI: https://doi.org/10.1007/BF02692550
IF: 2.1
2006-01-01
Journal of Electronic Materials
Abstract:Redistribution of arsenic (As) during silicidation of a 13-nm Ni film on an n + /p junction at 450°C is investigated. NiSi formation is observed by x-ray diffraction, micro-Raman scattering spectroscopy, and Rutherford backscattering spectroscopy (RBS). Both secondary ion mass spectroscopy and RBS data indicate the redistribution and accumulation of As into two layers after the low-temperature annealing. The deeper accumulation peak, located just near the silicide/silicon interface, is attributed to As segregation from silicide into Si substrate. The shallower accumulation peak is located in a vacancy-cluster layer several nanometers below the silicide film surface. The vacancy-cluster layer, characterized by cross-sectional transmission electron microscopy, separates the silicide film into two layers, and is attributed to the well-known Kirkendall effect.
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