Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Redistribution of Dopant Arsenic During Silicide Formation

Arsenic Redistribution Induced By Low-Temperature Ni Silicidation At 450 Degrees C On Shallow Junctions

Arsenic redistribution induced by low-temperature Ni silicidation at 450°C on shallow junctions

Dopant Redistribution Induced by Ni Silicidation at 300°C

Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS

Evolution of secondary defects in arsenic implanted Si

Interstitial diffusion of arsenic in silicon

Site preference of S-doping and its influence on the properties of a Ni/Ni3Al interface

Lattice Location of Supersaturated Arsenic Atoms in Silicon Studied by Channeled Ion Beam

Recrystallization, redistribution, and electrical activation of strained-silicon/Si0.7Ge0.3 heterostructures with implanted arsenic

Analytical Modeling of Nonlinear Diffusion of Arsenic in Silicon

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Arsenic Precipitation in Heavily Arsenic‐Doped Czochralski Silicon

Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with Low-Energy High-Dose Ion Implantation

Diffusion of Boron, Phosphorus, Arsenic, and Antimony in Thermally Grown Silicon Dioxide

Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication

Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication

A Comparative Study of Two Different Schemes to Dopant Segregation at NiSi/Si and PtSi/Si Interfaces for Schottky Barrier Height Lowering

Nickel Silicide Formation on Shallow Junctions

Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy

Spin-dependent recombination at arsenic donors in ion-implanted silicon