Abstract:The influence of boron (B)/arsenic (As) on X-ray photoelectron spectroscopy (XPS) study of NiSi formation on shallow junctions is investigated in this paper. The Ni-silicide film was formed after 30s soak anneal at 450°C on ultra shallow p+/n or n+/p junctions. The atomic ratio of Ni/Si profile in depth was probed by XPS and the results show that a uniform NiSi layer forms on B-doped p+/n junction while a non-uniform, Ni-rich silicide layer forms on As-doped n+/p junction. It does not agree with the results of other independent phase identification methods such as X-ray diffraction, Rutherford backscattering spectroscopy, and Raman scattering spectroscopy, which all demonstrate the formation of NiSi on both n+/p and p+/n junctions. Comparing the raw binding energy spectra of Ni and Si for each silicide film, the similar spectra for Ni signals are revealed. But the Si signals with an obviously smaller intensity is found to be responsible for the apparent Ni rich silicide formation on As-doped n+/p junction. It indicates that As atoms in the silicide film can affect the sputtering yield of Ni and Si, while no noticeable effect is observed for B atoms. More As atoms than B atoms segregation into the silicide layer is indeed verified by secondary ion mass spectroscopy. And micro-Raman scattering spectroscopy further confirms that the degree of crystallinity for NiSi on n+/p junction is inferior to that on p+/n junction.

Arsenic Redistribution Induced By Low-Temperature Ni Silicidation At 450 Degrees C On Shallow Junctions

Arsenic redistribution induced by low-temperature Ni silicidation at 450°C on shallow junctions

Nickel Silicide Formation on Shallow Junctions

Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS

Dopant Redistribution Induced by Ni Silicidation at 300°C

Redistribution of Dopant Arsenic During Silicide Formation

X-ray photoelectron spectroscopy study of NiSi formation on shallow junctions

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Linear Growth of Ni2si Thin Film on N+/P Junction at Low Temperature

Atomic-scale silicidation of low resistivity Ni-Si system through in-situ TEM investigation

Evolution of secondary defects in arsenic implanted Si

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Nickel Silicidation On N And P-Type Junctions At 300 Degrees C

Annealing Process Influence And Dopant-Silicide Interaction In Self-Aligned Nisi Technology

Influence of Nickel Precipitation on the Formation of Denuded Zone in Czochralski Silicon

Ni Silicide and Ni Germanosilicide Self-Aligned Process for 65nm and Beyond CMOS Technology by 2-Step Rapid Thermal Annealing

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